BeZnCdSe quantum-well ridge-waveguide laser diodes under low threshold room-temperature continuous-wave operation
- Shanghai Key Laboratory of Modern Optical System, Engineering Research Center of Optical Instrument and System (Ministry of Education), School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, 516 Jungong Road, Shanghai 200093 (China)
- Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan)
Low threshold current ridge-waveguide BeZnCdSe quantum-well laser diodes (LDs) have been developed by completely etching away the top p-type BeMgZnSe/ZnSe:N short-period superlattice cladding layer, which can suppress the leakage current that flows laterally outside of the electrode. The waveguide LDs are covered with a thick SiO{sub 2} layer and planarized with chemical-mechanical polishing and a reactive ion etching process. Room-temperature lasing under continuous-wave condition is achieved with the laser cavity formed by the cleaved waveguide facets coated with high-reflectivity dielectric films. For a 4 μm-wide green LD lasing around a wavelength of 535 nm, threshold current and voltage of 7.07 mA and 7.89 V are achieved for a cavity length of 300 μm, and the internal differential quantum efficiency, internal absorption loss, gain constant, and nominal transparency current density are estimated to be 27%, 4.09 cm{sup −1}, 29.92 (cm × μm)/kA and 6.35 kA/(cm{sup 2 }× μm), respectively. This compact device can realize a significantly improved performance with much lower threshold power consumption, which would benefit the potential application for ZnSe-based green LDs as light sources in full-color display and projector devices installed in consumer products such as pocket projectors.
- OSTI ID:
- 22485926
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GENERAL PHYSICS
ABSORPTION
CLADDING
CURRENT DENSITY
DIELECTRIC MATERIALS
ELECTRIC POTENTIAL
ETCHING
LASER CAVITIES
LEAKAGE CURRENT
MECHANICAL POLISHING
QUANTUM EFFICIENCY
QUANTUM WELLS
REFLECTIVITY
SILICON OXIDES
SUPERLATTICES
TEMPERATURE RANGE 0273-0400 K
THRESHOLD CURRENT
WAVEGUIDES
WAVELENGTHS
ZINC SELENIDES