Temperature dependence of Raman shifts in layered ReSe{sub 2} and SnSe{sub 2} semiconductor nanosheets

Journal Article · Mon Jul 06 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4926508· OSTI ID:22483156

Taube, A.; Łapińska, A.; Judek, J.

Transition metal dichalcogenides (TMDCs) are attractive for variety of nanoscale electronics and optoelectronics devices due to their unique properties. Despite growing progress in the research field of TMDCs, many of their properties are still unknown. In this letter, we report measurements of Raman spectra of rhenium diselenide (ReSe{sub 2}) and tin diselenide (SnSe{sub 2}) layered semiconductor nanosheets as a function of temperature (70–400 K). We analyze the temperature dependence of the positions of eight ReSe{sub 2} modes and SnSe{sub 2} A{sub 1g} mode. All observed Raman mode shifts exhibit nonlinear temperature dependence at low temperatures which is explained by optical phonon decay process into two or three acoustics phonons. The first order temperature coefficients (χ), determined for high temperatures, of rhenium diselenide Raman modes are in the range between −0.0033 and −0.0118 cm{sup −1}/K, whereas χ of tin diselenide A{sub 1g} mode was −0.0129 cm{sup −1}/K. Our findings are useful for further analysis of phonon and thermal properties of these dichalcogenide layered semiconductors.

• OSTI ID: 22483156
• Journal Information: Applied Physics Letters, Vol. 107, Issue 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ACOUSTICS
NANOSTRUCTURES
OPTOELECTRONIC DEVICES
PHONONS
RAMAN SPECTRA
RHENIUM SELENIDES
SEMICONDUCTOR MATERIALS
TEMPERATURE COEFFICIENT
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
THERMODYNAMIC PROPERTIES
TIN
TIN SELENIDES
TRANSITION ELEMENTS