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Title: Growth of ferroelectric Ba{sub 0.8}Sr{sub 0.2}TiO{sub 3} epitaxial films by ultraviolet pulsed laser irradiation of chemical solution derived precursor layers

Abstract

Highly crystalline epitaxial Ba{sub 0.8}Sr{sub 0.2}TiO{sub 3} (BST) thin-films are grown on (001)-oriented LaNiO{sub 3}-buffered LaAlO{sub 3} substrates by pulsed laser irradiation of solution derived barium-zirconium-titanium precursor layers using a UV Nd:YAG laser source at atmospheric conditions. The structural analyses of the obtained films, studied by X-ray diffractometry and transmission electron microscopy, demonstrate that laser processing allows the growth of tens of nm-thick BST epitaxial films with crystalline structure similar to that of films obtained through conventional thermal annealing methods. However, the fast pulsed nature of the laser employed leads to crystallization kinetic evolution orders of magnitude faster than in thermal treatments. The combination of specific photothermal and photochemical mechanisms is the main responsible for the ultrafast epitaxial laser-induced crystallization. Piezoresponse microscopy measurements demonstrate equivalent ferroelectric behavior in laser and thermally annealed films, being the piezoelectric constant ∼25 pm V{sup −1}.

Authors:
; ; ; ; ;  [1];  [1]
  1. Institut de Ciència de Materials de Barcelona, Consejo Superior de Investigaciones Científicas (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Catalonia (Spain)
Publication Date:
OSTI Identifier:
22483124
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 26; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; FERROELECTRIC MATERIALS; LASER RADIATION; NEODYMIUM LASERS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Queraltó, A., Pérez del Pino, A., E-mail: aperez@icmab.es, Mata, M. de la, Tristany, M., Gómez, A., Obradors, X., Puig, T., Arbiol, J., and Institució Catalana de Recerca i Estudis Avançats. Growth of ferroelectric Ba{sub 0.8}Sr{sub 0.2}TiO{sub 3} epitaxial films by ultraviolet pulsed laser irradiation of chemical solution derived precursor layers. United States: N. p., 2015. Web. doi:10.1063/1.4923376.
Queraltó, A., Pérez del Pino, A., E-mail: aperez@icmab.es, Mata, M. de la, Tristany, M., Gómez, A., Obradors, X., Puig, T., Arbiol, J., & Institució Catalana de Recerca i Estudis Avançats. Growth of ferroelectric Ba{sub 0.8}Sr{sub 0.2}TiO{sub 3} epitaxial films by ultraviolet pulsed laser irradiation of chemical solution derived precursor layers. United States. doi:10.1063/1.4923376.
Queraltó, A., Pérez del Pino, A., E-mail: aperez@icmab.es, Mata, M. de la, Tristany, M., Gómez, A., Obradors, X., Puig, T., Arbiol, J., and Institució Catalana de Recerca i Estudis Avançats. Mon . "Growth of ferroelectric Ba{sub 0.8}Sr{sub 0.2}TiO{sub 3} epitaxial films by ultraviolet pulsed laser irradiation of chemical solution derived precursor layers". United States. doi:10.1063/1.4923376.
@article{osti_22483124,
title = {Growth of ferroelectric Ba{sub 0.8}Sr{sub 0.2}TiO{sub 3} epitaxial films by ultraviolet pulsed laser irradiation of chemical solution derived precursor layers},
author = {Queraltó, A. and Pérez del Pino, A., E-mail: aperez@icmab.es and Mata, M. de la and Tristany, M. and Gómez, A. and Obradors, X. and Puig, T. and Arbiol, J. and Institució Catalana de Recerca i Estudis Avançats},
abstractNote = {Highly crystalline epitaxial Ba{sub 0.8}Sr{sub 0.2}TiO{sub 3} (BST) thin-films are grown on (001)-oriented LaNiO{sub 3}-buffered LaAlO{sub 3} substrates by pulsed laser irradiation of solution derived barium-zirconium-titanium precursor layers using a UV Nd:YAG laser source at atmospheric conditions. The structural analyses of the obtained films, studied by X-ray diffractometry and transmission electron microscopy, demonstrate that laser processing allows the growth of tens of nm-thick BST epitaxial films with crystalline structure similar to that of films obtained through conventional thermal annealing methods. However, the fast pulsed nature of the laser employed leads to crystallization kinetic evolution orders of magnitude faster than in thermal treatments. The combination of specific photothermal and photochemical mechanisms is the main responsible for the ultrafast epitaxial laser-induced crystallization. Piezoresponse microscopy measurements demonstrate equivalent ferroelectric behavior in laser and thermally annealed films, being the piezoelectric constant ∼25 pm V{sup −1}.},
doi = {10.1063/1.4923376},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 26,
volume = 106,
place = {United States},
year = {2015},
month = {6}
}