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Title: Broadband enhancement of local density of states using silicon-compatible hyperbolic metamaterials

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4922874· OSTI ID:22483061
; ;  [1];  [1];  [2]
  1. Department of Electrical and Computer Engineering and Photonics Center, Boston University, 8 Saint Mary's Street Boston, Massachusetts 02215 (United States)
  2. Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501 (Japan)

Light emitting silicon quantum dots by colloidal synthesis were uniformly spin-coated into a 20 nm-thick film and deposited atop a hyperbolic metamaterial of alternating TiN and SiO{sub 2} sub-wavelength layers. Using steady-state and time-resolved photoluminescence spectroscopy as a function of the emission wavelength in partnership with rigorous electromagnetic modeling of dipolar emission, we demonstrate enhanced Local Density of States and coupling to high-k modes in a broad spectral range. These findings provide an alternative approach for the engineering of novel Si-compatible broadband sources that leverage the control of radiative transitions in hyperbolic metamaterials and the flexibility of the widespread Si platform.

OSTI ID:
22483061
Journal Information:
Applied Physics Letters, Vol. 106, Issue 24; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English