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Title: Interfacial dislocations in (111) oriented (Ba{sub 0.7}Sr{sub 0.3})TiO{sub 3} films on SrTiO{sub 3} single crystal

Abstract

We have investigated the interfacial structure of epitaxial (Ba,Sr)TiO{sub 3} films grown on (111)-oriented SrTiO{sub 3} single-crystal substrates using transmission electron microscopy (TEM) techniques. Compared with the (100) epitaxial perovskite films, we observe dominant dislocation half-loop with Burgers vectors of a〈110〉 comprised of a misfit dislocation along 〈112〉, and threading dislocations along 〈110〉 or 〈100〉. The misfit dislocation with Burgers vector of a〈110〉 can dissociate into two ½a〈110〉 partial dislocations and one stacking fault. We found the dislocation reactions occur not only between misfit dislocations, but also between threading dislocations. Via three-dimensional electron tomography, we retrieved the configurations of the threading dislocation reactions. The reactions between threading dislocations lead to a more efficient strain relaxation than do the misfit dislocations alone in the near-interface region of the (111)-oriented (Ba{sub 0.7}Sr{sub 0.3})TiO{sub 3} films.

Authors:
 [1];  [2]; ; ;  [3]; ;  [4];  [1]
  1. National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, College of Engineering and Applied Science, and Collaborative Innovation Center of Advanced Materials, Nanjing University, Nanjing 210093 (China)
  2. Department of Materials, Physics and Energy Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)
  3. Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States)
  4. Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502 (Japan)
Publication Date:
OSTI Identifier:
22482199
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BURGERS VECTOR; DISLOCATIONS; EPITAXY; FILMS; MONOCRYSTALS; PEROVSKITE; RELAXATION; STACKING FAULTS; STRAINS; STRONTIUM TITANATES; SUBSTRATES; TITANIUM OXIDES; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Shen, Xuan, Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, Yamada, Tomoaki, PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, Lin, Ruoqian, Xin, Huolin L., Su, Dong, Kamo, Takafumi, Funakubo, Hiroshi, and Wu, Di. Interfacial dislocations in (111) oriented (Ba{sub 0.7}Sr{sub 0.3})TiO{sub 3} films on SrTiO{sub 3} single crystal. United States: N. p., 2015. Web. doi:10.1063/1.4932953.
Shen, Xuan, Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, Yamada, Tomoaki, PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, Lin, Ruoqian, Xin, Huolin L., Su, Dong, Kamo, Takafumi, Funakubo, Hiroshi, & Wu, Di. Interfacial dislocations in (111) oriented (Ba{sub 0.7}Sr{sub 0.3})TiO{sub 3} films on SrTiO{sub 3} single crystal. United States. https://doi.org/10.1063/1.4932953
Shen, Xuan, Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, Yamada, Tomoaki, PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, Lin, Ruoqian, Xin, Huolin L., Su, Dong, Kamo, Takafumi, Funakubo, Hiroshi, and Wu, Di. 2015. "Interfacial dislocations in (111) oriented (Ba{sub 0.7}Sr{sub 0.3})TiO{sub 3} films on SrTiO{sub 3} single crystal". United States. https://doi.org/10.1063/1.4932953.
@article{osti_22482199,
title = {Interfacial dislocations in (111) oriented (Ba{sub 0.7}Sr{sub 0.3})TiO{sub 3} films on SrTiO{sub 3} single crystal},
author = {Shen, Xuan and Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 and Yamada, Tomoaki and PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 and Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502 and Lin, Ruoqian and Xin, Huolin L. and Su, Dong and Kamo, Takafumi and Funakubo, Hiroshi and Wu, Di},
abstractNote = {We have investigated the interfacial structure of epitaxial (Ba,Sr)TiO{sub 3} films grown on (111)-oriented SrTiO{sub 3} single-crystal substrates using transmission electron microscopy (TEM) techniques. Compared with the (100) epitaxial perovskite films, we observe dominant dislocation half-loop with Burgers vectors of a〈110〉 comprised of a misfit dislocation along 〈112〉, and threading dislocations along 〈110〉 or 〈100〉. The misfit dislocation with Burgers vector of a〈110〉 can dissociate into two ½a〈110〉 partial dislocations and one stacking fault. We found the dislocation reactions occur not only between misfit dislocations, but also between threading dislocations. Via three-dimensional electron tomography, we retrieved the configurations of the threading dislocation reactions. The reactions between threading dislocations lead to a more efficient strain relaxation than do the misfit dislocations alone in the near-interface region of the (111)-oriented (Ba{sub 0.7}Sr{sub 0.3})TiO{sub 3} films.},
doi = {10.1063/1.4932953},
url = {https://www.osti.gov/biblio/22482199}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 14,
volume = 107,
place = {United States},
year = {2015},
month = {10}
}

Works referencing / citing this record:

Misfit strain relaxations of (101)-oriented ferroelectric PbTiO 3 /(La, Sr)(Al, Ta)O 3 thin film systems
journal, December 2018