Characteristics of the dynamics of breakdown filaments in Al{sub 2}O{sub 3}/InGaAs stacks

Journal Article · Mon Sep 21 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4931496· OSTI ID:22482136

Palumbo, F. ^[1]; Shekhter, P.; Eizenberg, M. ^[2]; Cohen Weinfeld, K. ^[3]

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1. National Scientific and Technical Research Council (CONICET), Av. Rivadavia 1917, Buenos Aires (Argentina)
2. Department of Materials Science and Engineering, Technion-Israel Institute of Technology, 32000 Haifa (Israel)
3. Solid State Institute, Technion-Israel Institute of Technology, 32000 Haifa (Israel)

In this paper, the Al{sub 2}O{sub 3}/InGaAs interface was studied by X-ray photoelectron spectroscopy (XPS) after a breakdown (BD) event at positive bias applied to the gate contact. The dynamics of the BD event were studied by comparable XPS measurements with different current compliance levels during the BD event. The overall results show that indium atoms from the substrate move towards the oxide by an electro-migration process and oxidize upon arrival following a power law dependence on the current compliance of the BD event. Such a result reveals the physical feature of the breakdown characteristics of III-V based metal-oxide-semiconductor devices.

• OSTI ID: 22482136
• Journal Information: Applied Physics Letters, Vol. 107, Issue 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM OXIDES
FILAMENTS
GALLIUM ARSENIDES
INDIUM
INDIUM ARSENIDES
INTERFACES
SEMICONDUCTOR DEVICES
SUBSTRATES
X-RAY PHOTOELECTRON SPECTROSCOPY