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Title: High-mobility thin film transistors with neodymium-substituted indium oxide active layer

Abstract

Thin-film transistors (TFTs) with neodymium-substituted indium oxide (InNdO) channel layer were demonstrated. The structural properties of the InNdO films as a function of annealing temperature have been analyzed using X-ray diffraction and transmission electron microscopy. The InNdO thin films showed polycrystalline nature when annealed at 450 °C with a lattice parameter (cubic cell) of 10.255 Å, which is larger than the cubic In{sub 2}O{sub 3} film (10.117 Å). The high-resolution transmission electron microscopy and energy dispersive X-ray spectroscopy showed that no Nd{sub 2}O{sub 3} clusters were found in the InNdO film, implying that Nd was incorporated into the In{sub 2}O{sub 3} lattice. The InNdO TFTs annealed at 450 °C exhibited more excellent electrical properties with a high mobility of 20.4 cm{sup 2} V{sup −1} s{sup −1} and better electric bias stability compared to those annealed at 300 °C, which was attributed to the reduction of the scattering centers and/or charge traps due to the decrease of the |Nd3d{sub 5/2}{sup 5}4f{sup 4}O2p{sup −1}〉 electron configuration.

Authors:
; ; ; ; ; ; ; ; ;  [1]
  1. State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640 (China)
Publication Date:
OSTI Identifier:
22482084
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; ELECTRICAL PROPERTIES; INDIUM OXIDES; LATTICE PARAMETERS; MOBILITY; NEODYMIUM; NEODYMIUM OXIDES; POLYCRYSTALS; RESOLUTION; THIN FILMS; TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY; TRAPS; X-RAY DIFFRACTION; X-RAY SPECTROSCOPY

Citation Formats

Lin, Zhenguo, Lan, Linfeng, E-mail: lanlinfeng@scut.edu.cn, Xiao, Peng, Sun, Sheng, Li, Yuzhi, Song, Wei, Gao, Peixiong, Wang, Lei, Ning, Honglong, and Peng, Junbiao. High-mobility thin film transistors with neodymium-substituted indium oxide active layer. United States: N. p., 2015. Web. doi:10.1063/1.4931140.
Lin, Zhenguo, Lan, Linfeng, E-mail: lanlinfeng@scut.edu.cn, Xiao, Peng, Sun, Sheng, Li, Yuzhi, Song, Wei, Gao, Peixiong, Wang, Lei, Ning, Honglong, & Peng, Junbiao. High-mobility thin film transistors with neodymium-substituted indium oxide active layer. United States. doi:10.1063/1.4931140.
Lin, Zhenguo, Lan, Linfeng, E-mail: lanlinfeng@scut.edu.cn, Xiao, Peng, Sun, Sheng, Li, Yuzhi, Song, Wei, Gao, Peixiong, Wang, Lei, Ning, Honglong, and Peng, Junbiao. Mon . "High-mobility thin film transistors with neodymium-substituted indium oxide active layer". United States. doi:10.1063/1.4931140.
@article{osti_22482084,
title = {High-mobility thin film transistors with neodymium-substituted indium oxide active layer},
author = {Lin, Zhenguo and Lan, Linfeng, E-mail: lanlinfeng@scut.edu.cn and Xiao, Peng and Sun, Sheng and Li, Yuzhi and Song, Wei and Gao, Peixiong and Wang, Lei and Ning, Honglong and Peng, Junbiao},
abstractNote = {Thin-film transistors (TFTs) with neodymium-substituted indium oxide (InNdO) channel layer were demonstrated. The structural properties of the InNdO films as a function of annealing temperature have been analyzed using X-ray diffraction and transmission electron microscopy. The InNdO thin films showed polycrystalline nature when annealed at 450 °C with a lattice parameter (cubic cell) of 10.255 Å, which is larger than the cubic In{sub 2}O{sub 3} film (10.117 Å). The high-resolution transmission electron microscopy and energy dispersive X-ray spectroscopy showed that no Nd{sub 2}O{sub 3} clusters were found in the InNdO film, implying that Nd was incorporated into the In{sub 2}O{sub 3} lattice. The InNdO TFTs annealed at 450 °C exhibited more excellent electrical properties with a high mobility of 20.4 cm{sup 2} V{sup −1} s{sup −1} and better electric bias stability compared to those annealed at 300 °C, which was attributed to the reduction of the scattering centers and/or charge traps due to the decrease of the |Nd3d{sub 5/2}{sup 5}4f{sup 4}O2p{sup −1}〉 electron configuration.},
doi = {10.1063/1.4931140},
journal = {Applied Physics Letters},
number = 11,
volume = 107,
place = {United States},
year = {Mon Sep 14 00:00:00 EDT 2015},
month = {Mon Sep 14 00:00:00 EDT 2015}
}
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