Doping dependent blue shift and linewidth broadening of intersubband absorption in non-polar m-plane AlGaN/GaN multiple quantum wells

Journal Article · Mon Sep 14 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4931096· OSTI ID:22482083

Kotani, Teruhisa ^[1]; Arita, Munetaka ^[1]; Arakawa, Yasuhiko ^[1]

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1. Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

Blue shift and broadening of the absorption spectra of mid-infrared intersubband transition in non-polar m-plane AlGaN/GaN 10 quantum wells were observed with increasing doping density. As the doping density was increased from 6.6 × 10{sup 11} to 6.0 × 10{sup 12 }cm{sup −2} per a quantum well, the intersubband absorption peak energy shifted from 274.0 meV to 302.9 meV, and the full width at half maximum increased from 56.4 meV to 112.4 meV. Theoretical calculations reveal that the blue shift is due to many body effects, and the intersubband linewidth in doped AlGaN/GaN QW is mainly determined by scattering due to interface roughness, LO phonons, and ionized impurities.

• OSTI ID: 22482083
• Journal Information: Applied Physics Letters, Vol. 107, Issue 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABSORPTION
ABSORPTION SPECTRA
DOPED MATERIALS
GALLIUM NITRIDES
IMPURITIES
INTERFACES
MANY-BODY PROBLEM
MEV RANGE 100-1000
PEAKS
PHONONS
QUANTUM WELLS
ROUGHNESS
SCATTERING