Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators

Journal Article · Mon Sep 07 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4930230· OSTI ID:22482048

Gaskell, J.; Fromhold, T. M.; Greenaway, M. T. ^[1]; Eaves, L. ^[1]; Novoselov, K. S.; Mishchenko, A. ^[2]; Geim, A. K. ^[2]

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1. School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)
2. School of Physics and Astronomy, University of Manchester, Manchester M13 9PL (United Kingdom)

We assess the potential of two-terminal graphene-hexagonal boron nitride-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response of the diodes in a resonant circuit. We quantify how the frequency and power of the current oscillations depend on the diode and circuit parameters including the doping of the graphene electrodes, device geometry, alignment of the graphene lattices, and the circuit impedances. Our results indicate that current oscillations with frequencies of up to several hundred GHz should be achievable.

• OSTI ID: 22482048
• Journal Information: Applied Physics Letters, Vol. 107, Issue 10; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
BORON NITRIDES
ELECTRODES
GHZ RANGE
GRAPHENE
IMPEDANCE
OSCILLATIONS
OSCILLATORS
SIMULATION
TIME DEPENDENCE
TUNNEL DIODES