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Title: Microstructure and electrical properties of Na{sub 0.5}Bi{sub 0.5}(Ti{sub 0.98}Zr{sub 0.02})O{sub 3} thin film deposited on indium tin oxide/glass substrate

Abstract

Highlights: • NBTZr deposited on ITO/glass under O{sub 2} exhibits a phase-pure perovskite structure. • NBTZr shows a well-defined P–E with a remanent polarization of 11.5 μC/cm{sup 2}. • At 100 kHz and 14 V, the dielectric tunability is 44.97% and FOM is 3.58. • At 100 kHz, the ϵ{sub r} and tanδ are 205 and 0.092, respectively. - Abstract: Na{sub 0.5}Bi{sub 0.5}(Ti{sub 0.98}Zr{sub 0.02})O{sub 3} (NBTZr) thin film has been prepared by chemical solution deposition onto indium tin oxide (ITO)/glass under O{sub 2} atmosphere. The microstructure and related electrical performance are investigated. The film exhibits a phase-pure polycrystalline perovskite structure, with evenly distributed grain size and full compactness. A well-defined polarization-electric field (P–E) loop can be observed with a remanent polarization (P{sub r}) of 11.5 μC/cm{sup 2} and small gap. At 14 V and 100 kHz, the dielectric tunability as high as 44.97% can be achieved and the dielectric constant of 205, dissipation factor of 0.092 as well as figure of merit of 3.58 are obtained.

Authors:
 [1];  [2]; ; ; ;  [1]
  1. School of Materials Science and Engineering, University of Jinan, Jinan 250022 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22475753
Resource Type:
Journal Article
Journal Name:
Materials Research Bulletin
Additional Journal Information:
Journal Volume: 65; Other Information: Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BISMUTH COMPOUNDS; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC FIELDS; GLASS; GRAIN SIZE; INDIUM OXIDES; OXYGEN COMPOUNDS; PERFORMANCE; PERMITTIVITY; PEROVSKITE; POLARIZATION; POLYCRYSTALS; SODIUM COMPOUNDS; SUBSTRATES; THIN FILMS; TIN OXIDES; TITANIUM COMPOUNDS; ZIRCONIUM COMPOUNDS

Citation Formats

Yang, C.H., E-mail: mse_yangch@ujn.edu.cn, Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, Jinan 250022, Sui, H.T., Geng, F.J., Feng, C., and Qian, J. Microstructure and electrical properties of Na{sub 0.5}Bi{sub 0.5}(Ti{sub 0.98}Zr{sub 0.02})O{sub 3} thin film deposited on indium tin oxide/glass substrate. United States: N. p., 2015. Web. doi:10.1016/J.MATERRESBULL.2015.01.006.
Yang, C.H., E-mail: mse_yangch@ujn.edu.cn, Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, Jinan 250022, Sui, H.T., Geng, F.J., Feng, C., & Qian, J. Microstructure and electrical properties of Na{sub 0.5}Bi{sub 0.5}(Ti{sub 0.98}Zr{sub 0.02})O{sub 3} thin film deposited on indium tin oxide/glass substrate. United States. doi:10.1016/J.MATERRESBULL.2015.01.006.
Yang, C.H., E-mail: mse_yangch@ujn.edu.cn, Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, Jinan 250022, Sui, H.T., Geng, F.J., Feng, C., and Qian, J. Fri . "Microstructure and electrical properties of Na{sub 0.5}Bi{sub 0.5}(Ti{sub 0.98}Zr{sub 0.02})O{sub 3} thin film deposited on indium tin oxide/glass substrate". United States. doi:10.1016/J.MATERRESBULL.2015.01.006.
@article{osti_22475753,
title = {Microstructure and electrical properties of Na{sub 0.5}Bi{sub 0.5}(Ti{sub 0.98}Zr{sub 0.02})O{sub 3} thin film deposited on indium tin oxide/glass substrate},
author = {Yang, C.H., E-mail: mse_yangch@ujn.edu.cn and Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, Jinan 250022 and Sui, H.T. and Geng, F.J. and Feng, C. and Qian, J.},
abstractNote = {Highlights: • NBTZr deposited on ITO/glass under O{sub 2} exhibits a phase-pure perovskite structure. • NBTZr shows a well-defined P–E with a remanent polarization of 11.5 μC/cm{sup 2}. • At 100 kHz and 14 V, the dielectric tunability is 44.97% and FOM is 3.58. • At 100 kHz, the ϵ{sub r} and tanδ are 205 and 0.092, respectively. - Abstract: Na{sub 0.5}Bi{sub 0.5}(Ti{sub 0.98}Zr{sub 0.02})O{sub 3} (NBTZr) thin film has been prepared by chemical solution deposition onto indium tin oxide (ITO)/glass under O{sub 2} atmosphere. The microstructure and related electrical performance are investigated. The film exhibits a phase-pure polycrystalline perovskite structure, with evenly distributed grain size and full compactness. A well-defined polarization-electric field (P–E) loop can be observed with a remanent polarization (P{sub r}) of 11.5 μC/cm{sup 2} and small gap. At 14 V and 100 kHz, the dielectric tunability as high as 44.97% can be achieved and the dielectric constant of 205, dissipation factor of 0.092 as well as figure of merit of 3.58 are obtained.},
doi = {10.1016/J.MATERRESBULL.2015.01.006},
journal = {Materials Research Bulletin},
issn = {0025-5408},
number = ,
volume = 65,
place = {United States},
year = {2015},
month = {5}
}