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Title: Growth and luminescent properties of scintillators based on the single crystalline films of Lu{sub 3−x}Gd{sub x}Al{sub 5}O{sub 12}:Ce garnet

Abstract

Highlights: • Single crystalline films of Lu{sub 3−x}Gd{sub x}Al{sub 5}O{sub 12} garnets at x = 0 ÷ 3.0 were grown by LPE method onto YAG substrates. • Lattice constant of Lu{sub 3−}Gd{sub x}Al{sub 5}O{sub 12}:Ce film and the misfit m between films and YAG substrate changed linearly with increasing of Gd content. • Effective Gd{sup 3+}–Ce{sup 3+} energy transfer occurs in the Lu{sub 3−x}Gd{sub x}Al{sub 5}O{sub 12}:Ce films. • Best scintillation light yield is observed in the Lu{sub 3}Al{sub 5}O{sub 12}:Ce and Lu{sub 2.4}Gd{sub 0.6}Al{sub 5}O{sub 12}:Ce films. • Increase of the Gd content in x = 1.5–2.5 range results in decreasing the scintillation LY of Lu{sub 3−x}Gd{sub x}Al{sub 5}O{sub 12}:Ce films. - Abstract: The work is related to the growth of scintillators based on the single crystalline films (SCF) of Ce{sup 3+} doped Lu{sub 3−}Gd{sub x}Al{sub 5}O{sub 12} mixed rare-earth garnets by Liquid Phase Epitaxy (LPE) method. We have shown, that full set of Lu{sub 3−}Gd{sub x}Al{sub 5}O{sub 12} SCFs with x values ranging from 0 to 3.0 can be successfully crystallized by the LPE method onto Y{sub 3}Al{sub 5}O{sub 12} (YAG) substrates from the melt-solutions based on PbO-B{sub 2}O{sub 3} flux. The absorption, X-ray excited luminescence, photoluminescence, thermoluminescencemore » and light yield measurements, the latter under excitation by α-particles of {sup 239}Pu and {sup 241}Am radioisotopes, were applied for their characterization.« less

Authors:
 [1];  [1];  [2];  [3];  [4]; ; ;  [5]; ;  [6]
  1. Institute of Physics, Kazimierz Wielki University in Bydgoszcz, 85090 Bydgoszcz (Poland)
  2. Laboratory for Optoelectronic Materials, Department of Electronics of Ivan Franko National University of Lviv, 79017 Lviv (Ukraine)
  3. Danylo Halytskyy Lviv National Medical University, 79010 Lviv (Ukraine)
  4. Institute for Scintillation Materials, NAS of Ukraine, 61001 Kharkiv (Ukraine)
  5. Institute of Physics, AS CR, 16253 Prague (Czech Republic)
  6. Institute of Nuclear Physic, Polish Academy of Science, 31-342 Krakow (Poland)
Publication Date:
OSTI Identifier:
22475741
Resource Type:
Journal Article
Journal Name:
Materials Research Bulletin
Additional Journal Information:
Journal Volume: 64; Other Information: Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; ALUMINATES; CERIUM ADDITIONS; CRYSTAL STRUCTURE; DEFECTS; DOPED MATERIALS; EXCITATION; GADOLINIUM COMPOUNDS; GARNETS; LATTICE PARAMETERS; LIQUID PHASE EPITAXY; LUTETIUM COMPOUNDS; MONOCRYSTALS; OPTICAL PROPERTIES; PHOSPHORS; PHOTOLUMINESCENCE; SCINTILLATIONS; THERMOLUMINESCENCE; THIN FILMS; X-RAY DIFFRACTION

Citation Formats

Zorenko, Yu, Laboratory for Optoelectronic Materials, Department of Electronics of Ivan Franko National University of Lviv, 79017 Lviv, Gorbenko, V., Laboratory for Optoelectronic Materials, Department of Electronics of Ivan Franko National University of Lviv, 79017 Lviv, Vasylkiv, Ja, Zelenyj, A., Fedorov, A., Kucerkova, R., Mares, J. A., Nikl, M., Bilski, P., and Twardak, A. Growth and luminescent properties of scintillators based on the single crystalline films of Lu{sub 3−x}Gd{sub x}Al{sub 5}O{sub 12}:Ce garnet. United States: N. p., 2015. Web. doi:10.1016/J.MATERRESBULL.2015.01.020.
Zorenko, Yu, Laboratory for Optoelectronic Materials, Department of Electronics of Ivan Franko National University of Lviv, 79017 Lviv, Gorbenko, V., Laboratory for Optoelectronic Materials, Department of Electronics of Ivan Franko National University of Lviv, 79017 Lviv, Vasylkiv, Ja, Zelenyj, A., Fedorov, A., Kucerkova, R., Mares, J. A., Nikl, M., Bilski, P., & Twardak, A. Growth and luminescent properties of scintillators based on the single crystalline films of Lu{sub 3−x}Gd{sub x}Al{sub 5}O{sub 12}:Ce garnet. United States. doi:10.1016/J.MATERRESBULL.2015.01.020.
Zorenko, Yu, Laboratory for Optoelectronic Materials, Department of Electronics of Ivan Franko National University of Lviv, 79017 Lviv, Gorbenko, V., Laboratory for Optoelectronic Materials, Department of Electronics of Ivan Franko National University of Lviv, 79017 Lviv, Vasylkiv, Ja, Zelenyj, A., Fedorov, A., Kucerkova, R., Mares, J. A., Nikl, M., Bilski, P., and Twardak, A. Wed . "Growth and luminescent properties of scintillators based on the single crystalline films of Lu{sub 3−x}Gd{sub x}Al{sub 5}O{sub 12}:Ce garnet". United States. doi:10.1016/J.MATERRESBULL.2015.01.020.
@article{osti_22475741,
title = {Growth and luminescent properties of scintillators based on the single crystalline films of Lu{sub 3−x}Gd{sub x}Al{sub 5}O{sub 12}:Ce garnet},
author = {Zorenko, Yu and Laboratory for Optoelectronic Materials, Department of Electronics of Ivan Franko National University of Lviv, 79017 Lviv and Gorbenko, V. and Laboratory for Optoelectronic Materials, Department of Electronics of Ivan Franko National University of Lviv, 79017 Lviv and Vasylkiv, Ja and Zelenyj, A. and Fedorov, A. and Kucerkova, R. and Mares, J. A. and Nikl, M. and Bilski, P. and Twardak, A.},
abstractNote = {Highlights: • Single crystalline films of Lu{sub 3−x}Gd{sub x}Al{sub 5}O{sub 12} garnets at x = 0 ÷ 3.0 were grown by LPE method onto YAG substrates. • Lattice constant of Lu{sub 3−}Gd{sub x}Al{sub 5}O{sub 12}:Ce film and the misfit m between films and YAG substrate changed linearly with increasing of Gd content. • Effective Gd{sup 3+}–Ce{sup 3+} energy transfer occurs in the Lu{sub 3−x}Gd{sub x}Al{sub 5}O{sub 12}:Ce films. • Best scintillation light yield is observed in the Lu{sub 3}Al{sub 5}O{sub 12}:Ce and Lu{sub 2.4}Gd{sub 0.6}Al{sub 5}O{sub 12}:Ce films. • Increase of the Gd content in x = 1.5–2.5 range results in decreasing the scintillation LY of Lu{sub 3−x}Gd{sub x}Al{sub 5}O{sub 12}:Ce films. - Abstract: The work is related to the growth of scintillators based on the single crystalline films (SCF) of Ce{sup 3+} doped Lu{sub 3−}Gd{sub x}Al{sub 5}O{sub 12} mixed rare-earth garnets by Liquid Phase Epitaxy (LPE) method. We have shown, that full set of Lu{sub 3−}Gd{sub x}Al{sub 5}O{sub 12} SCFs with x values ranging from 0 to 3.0 can be successfully crystallized by the LPE method onto Y{sub 3}Al{sub 5}O{sub 12} (YAG) substrates from the melt-solutions based on PbO-B{sub 2}O{sub 3} flux. The absorption, X-ray excited luminescence, photoluminescence, thermoluminescence and light yield measurements, the latter under excitation by α-particles of {sup 239}Pu and {sup 241}Am radioisotopes, were applied for their characterization.},
doi = {10.1016/J.MATERRESBULL.2015.01.020},
journal = {Materials Research Bulletin},
issn = {0025-5408},
number = ,
volume = 64,
place = {United States},
year = {2015},
month = {4}
}