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Title: Effects of copper excess and copper deficiency on the structural and electrical properties of bulk Cu{sub x}SnSe{sub 3} with x=1.6–2.2

Abstract

Effects of the Cu variation on the morphological, structural, and electrical properties of bulk Cu{sub x}SnSe{sub 3} (CTSe) with x=1.6–2.2 have been investigated. Dense CTSe pellets with grains of 3–4 µm were obtained after sintering at 550 °C. All CTSe pellets showed a dominant p-type behavior. CTSe at x=2.0 with a hole concentration (n{sub p}) of 1.02×10{sup 18} cm{sup −3} and Hall mobility (μ) of 225 cm{sup 2}/V/s had a highest conductivity (σ) of 39 S/cm. CTSe at x=1.6 with n{sub p} of 5.0×10{sup 17} cm{sup −3} and of 11 cm{sup 2}/V/s had a lowest of 0.90 S/cm. The explanation, based upon vacancies and antisite defects, for the changes in electrical property with the Cu content is supported by the data from lattice parameter. The study in bulk properties of CTSe and its defects is helpful for selecting the suitable absorber composition to fabricate thin film solar cells. - Graphical abstract: Cu{sub 2}SnSe{sub 3} is an absorber candidate for solar cells. The Cu stoichiometry on electrical properties, which is important for CIGS and CZTS, is investigated and the Cu-deficiency composition is recommended. - Highlights: • Cu{sub x}SnSe{sub 3} (CTSe) bulks with 1.6≤x≤2.2 were prepared by reactive sintering. • Cu{sub 2}SnSe{submore » 3} with n{sub p} of 1.02×10{sup 18} cm{sup −3} and μ of 225 cm{sup 2}/V/s had highest σ of 39 S/cm. • Cu{sub 1.6}SnSe{sub 3} with n{sub p}=5.0×10{sup 17} cm{sup −3} and μ=11 cm{sup 2}/V/s had lowest σ=0.90 S/cm. • Lower n{sub p} at CTSe at x=1.6 is related to the formation of the Sn-to-Cu defect. • The drop in n{sub p} for CTSe at x=2.2 indicates V{sub Sn}{sup 4−} dominates over Cu{sub Sn}{sup 3−} defect.« less

Authors:
;
Publication Date:
OSTI Identifier:
22475645
Resource Type:
Journal Article
Journal Name:
Journal of Solid State Chemistry
Additional Journal Information:
Journal Volume: 226; Other Information: Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0022-4596
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; CONCENTRATION RATIO; COPPER; COPPER COMPOUNDS; ELECTRIC CONDUCTIVITY; HALL EFFECT; HOLES; LATTICE PARAMETERS; MICROSTRUCTURE; MOBILITY; P-TYPE CONDUCTORS; SINTERING; SOLAR CELLS; THIN FILMS; TIN SELENIDES; VACANCIES

Citation Formats

Wubet, Walelign, and Kuo, Dong-Hau. Effects of copper excess and copper deficiency on the structural and electrical properties of bulk Cu{sub x}SnSe{sub 3} with x=1.6–2.2. United States: N. p., 2015. Web. doi:10.1016/J.JSSC.2015.02.012.
Wubet, Walelign, & Kuo, Dong-Hau. Effects of copper excess and copper deficiency on the structural and electrical properties of bulk Cu{sub x}SnSe{sub 3} with x=1.6–2.2. United States. https://doi.org/10.1016/J.JSSC.2015.02.012
Wubet, Walelign, and Kuo, Dong-Hau. 2015. "Effects of copper excess and copper deficiency on the structural and electrical properties of bulk Cu{sub x}SnSe{sub 3} with x=1.6–2.2". United States. https://doi.org/10.1016/J.JSSC.2015.02.012.
@article{osti_22475645,
title = {Effects of copper excess and copper deficiency on the structural and electrical properties of bulk Cu{sub x}SnSe{sub 3} with x=1.6–2.2},
author = {Wubet, Walelign and Kuo, Dong-Hau},
abstractNote = {Effects of the Cu variation on the morphological, structural, and electrical properties of bulk Cu{sub x}SnSe{sub 3} (CTSe) with x=1.6–2.2 have been investigated. Dense CTSe pellets with grains of 3–4 µm were obtained after sintering at 550 °C. All CTSe pellets showed a dominant p-type behavior. CTSe at x=2.0 with a hole concentration (n{sub p}) of 1.02×10{sup 18} cm{sup −3} and Hall mobility (μ) of 225 cm{sup 2}/V/s had a highest conductivity (σ) of 39 S/cm. CTSe at x=1.6 with n{sub p} of 5.0×10{sup 17} cm{sup −3} and of 11 cm{sup 2}/V/s had a lowest of 0.90 S/cm. The explanation, based upon vacancies and antisite defects, for the changes in electrical property with the Cu content is supported by the data from lattice parameter. The study in bulk properties of CTSe and its defects is helpful for selecting the suitable absorber composition to fabricate thin film solar cells. - Graphical abstract: Cu{sub 2}SnSe{sub 3} is an absorber candidate for solar cells. The Cu stoichiometry on electrical properties, which is important for CIGS and CZTS, is investigated and the Cu-deficiency composition is recommended. - Highlights: • Cu{sub x}SnSe{sub 3} (CTSe) bulks with 1.6≤x≤2.2 were prepared by reactive sintering. • Cu{sub 2}SnSe{sub 3} with n{sub p} of 1.02×10{sup 18} cm{sup −3} and μ of 225 cm{sup 2}/V/s had highest σ of 39 S/cm. • Cu{sub 1.6}SnSe{sub 3} with n{sub p}=5.0×10{sup 17} cm{sup −3} and μ=11 cm{sup 2}/V/s had lowest σ=0.90 S/cm. • Lower n{sub p} at CTSe at x=1.6 is related to the formation of the Sn-to-Cu defect. • The drop in n{sub p} for CTSe at x=2.2 indicates V{sub Sn}{sup 4−} dominates over Cu{sub Sn}{sup 3−} defect.},
doi = {10.1016/J.JSSC.2015.02.012},
url = {https://www.osti.gov/biblio/22475645}, journal = {Journal of Solid State Chemistry},
issn = {0022-4596},
number = ,
volume = 226,
place = {United States},
year = {Sun Mar 15 00:00:00 EDT 2015},
month = {Sun Mar 15 00:00:00 EDT 2015}
}