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Title: Erratum to: “Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well”

Abstract

No abstract prepared.

Authors:
 [1];  [2];  [3]; ; ;  [1]; ;  [2]
  1. Russian Academy of Sciences, Institute of Ultrahigh Frequency Semiconductor Electronics (Russian Federation)
  2. National Research Centre “Kurchatov Institute” (Russian Federation)
  3. Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)
Publication Date:
OSTI Identifier:
22472321
Resource Type:
Journal Article
Journal Name:
Crystallography Reports
Additional Journal Information:
Journal Volume: 60; Journal Issue: 3; Other Information: Copyright (c) 2015 Pleiades Publishing, Inc.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7745
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM ARSENIDES; ELECTRICAL PROPERTIES; ERRORS; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; QUANTUM WELLS; SUBSTRATES

Citation Formats

Galiev, G. B., Vasiliev, A. L., Imamov, R. M., Klimov, E. A., Maltsev, P. P., Pushkarev, S. S., Presniakov, M. Yu., and Trunkin, I. N. Erratum to: “Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well”. United States: N. p., 2015. Web. doi:10.1134/S1063774515030128.
Galiev, G. B., Vasiliev, A. L., Imamov, R. M., Klimov, E. A., Maltsev, P. P., Pushkarev, S. S., Presniakov, M. Yu., & Trunkin, I. N. Erratum to: “Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well”. United States. doi:10.1134/S1063774515030128.
Galiev, G. B., Vasiliev, A. L., Imamov, R. M., Klimov, E. A., Maltsev, P. P., Pushkarev, S. S., Presniakov, M. Yu., and Trunkin, I. N. Fri . "Erratum to: “Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well”". United States. doi:10.1134/S1063774515030128.
@article{osti_22472321,
title = {Erratum to: “Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well”},
author = {Galiev, G. B. and Vasiliev, A. L. and Imamov, R. M. and Klimov, E. A. and Maltsev, P. P. and Pushkarev, S. S. and Presniakov, M. Yu. and Trunkin, I. N.},
abstractNote = {No abstract prepared.},
doi = {10.1134/S1063774515030128},
journal = {Crystallography Reports},
issn = {1063-7745},
number = 3,
volume = 60,
place = {United States},
year = {2015},
month = {5}
}