Growth of crystalline ZnO films on the nitridated (0001) sapphire surface

Journal Article · Wed Jul 15 00:00:00 EDT 2015 · Crystallography Reports

DOI:https://doi.org/10.1134/S1063774515040094· OSTI ID:22472236

Butashin, A. V.; Kanevsky, V. M.; Prosekov, P. A.; Kondratev, O. A.; Blagov, A. E.; Vasil’ev, A. L.; Rakova, E. V. ^[1]; Babaev, V. A.; Ismailov, A. M. ^[2]; Vovk, E. A.; Nizhankovsky, S. V. ^[3]

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1. Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)
2. Dagestan State University (Russian Federation)
3. National Academy of Sciences of Ukraine, Institute for Single Crystals (Ukraine)

The surface morphology and structure of (0001) sapphire substrates subjected to thermochemical nitridation in a mixture of N{sub 2}, CO, and H{sub 2} gases are investigated by electron and probe microscopy and X-ray and electron diffraction. It is shown that an aluminum nitride layer is formed on the substrate surface and heteroepitaxial ZnO films deposited onto such substrates by magnetron sputtering have a higher quality when compared with films grown on sapphire.

• OSTI ID: 22472236
• Journal Information: Crystallography Reports, Vol. 60, Issue 4; Other Information: Copyright (c) 2015 Pleiades Publishing, Inc.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7745
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
CARBON MONOXIDE
COMPARATIVE EVALUATIONS
CRYSTAL GROWTH
ELECTRON DIFFRACTION
ELECTRONS
FILMS
HYDROGEN
MICROSCOPY
MIXTURES
MORPHOLOGY
NITRIDATION
SAPPHIRE
SPUTTERING
SUBSTRATES
SURFACES
X-RAY DIFFRACTION
ZINC OXIDES