Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures

Journal Article · Thu Jan 15 00:00:00 EST 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615010273· OSTI ID:22470143

Kovalevsky, K. A.; Orlov, M. L.; Tsyplenkov, V. V.; Bekin, N. A.; Yablonskiy, A. N.; Yunin, P. A. ^[1]; Pavlov, S. G. ^[2]; Abrosimov, N. V. ^[3]; Hübers, H. -W. ^[2]; Radamson, H. H. ^[4]; Shastin, V. N. ^[1]

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1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
2. German Aerospace Center (DLR), Institute of Planetary Research (Germany)
3. Leibniz Institute for Crystal Growth (Germany)
4. Royal Institute of Technology (KTH) (Sweden)

The results of measurements of the total terahertz-range photoluminescence of Group-V donors (phosphorus, antimony, bismuth, arsenic) in bulk silicon and SiGe/Si heterostructures depending on the excitation intensity are presented. The signal of bulk silicon was also measured as a function of uniaxial stress. The results of measurement of the dependence of the spontaneous emission intensity on the uniaxial stress is in rather good agreement with theoretical calculations of the relaxation times of excited states of donors in bulk silicon. Comparative measurements of the spontaneous emission from various strained heterostructures showed that the photoluminescence signal is caused by donor-doped silicon regions.

• OSTI ID: 22470143
• Journal Information: Semiconductors, Vol. 49, Issue 1; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONY
ARSENIC
BISMUTH
DOPED MATERIALS
EXCITATION
EXCITED STATES
GERMANIUM SILICIDES
PHOSPHORUS
PHOTOLUMINESCENCE
SILICON
STRAINS
STRESSES