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Title: Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures

Abstract

The results of measurements of the total terahertz-range photoluminescence of Group-V donors (phosphorus, antimony, bismuth, arsenic) in bulk silicon and SiGe/Si heterostructures depending on the excitation intensity are presented. The signal of bulk silicon was also measured as a function of uniaxial stress. The results of measurement of the dependence of the spontaneous emission intensity on the uniaxial stress is in rather good agreement with theoretical calculations of the relaxation times of excited states of donors in bulk silicon. Comparative measurements of the spontaneous emission from various strained heterostructures showed that the photoluminescence signal is caused by donor-doped silicon regions.

Authors:
; ; ; ; ; ;  [1];  [2];  [3];  [2];  [4];  [1]
  1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
  2. German Aerospace Center (DLR), Institute of Planetary Research (Germany)
  3. Leibniz Institute for Crystal Growth (Germany)
  4. Royal Institute of Technology (KTH) (Sweden)
Publication Date:
OSTI Identifier:
22470143
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 1; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANTIMONY; ARSENIC; BISMUTH; DOPED MATERIALS; EXCITATION; EXCITED STATES; GERMANIUM SILICIDES; PHOSPHORUS; PHOTOLUMINESCENCE; SILICON; STRAINS; STRESSES

Citation Formats

Zhukavin, R. Kh., E-mail: zhur@ipmras.ru, Kovalevsky, K. A., Orlov, M. L., Tsyplenkov, V. V., Bekin, N. A., Yablonskiy, A. N., Yunin, P. A., Pavlov, S. G., Abrosimov, N. V., Hübers, H.-W., Radamson, H. H., and Shastin, V. N.. Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures. United States: N. p., 2015. Web. doi:10.1134/S1063782615010273.
Zhukavin, R. Kh., E-mail: zhur@ipmras.ru, Kovalevsky, K. A., Orlov, M. L., Tsyplenkov, V. V., Bekin, N. A., Yablonskiy, A. N., Yunin, P. A., Pavlov, S. G., Abrosimov, N. V., Hübers, H.-W., Radamson, H. H., & Shastin, V. N.. Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures. United States. doi:10.1134/S1063782615010273.
Zhukavin, R. Kh., E-mail: zhur@ipmras.ru, Kovalevsky, K. A., Orlov, M. L., Tsyplenkov, V. V., Bekin, N. A., Yablonskiy, A. N., Yunin, P. A., Pavlov, S. G., Abrosimov, N. V., Hübers, H.-W., Radamson, H. H., and Shastin, V. N.. Thu . "Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures". United States. doi:10.1134/S1063782615010273.
@article{osti_22470143,
title = {Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures},
author = {Zhukavin, R. Kh., E-mail: zhur@ipmras.ru and Kovalevsky, K. A. and Orlov, M. L. and Tsyplenkov, V. V. and Bekin, N. A. and Yablonskiy, A. N. and Yunin, P. A. and Pavlov, S. G. and Abrosimov, N. V. and Hübers, H.-W. and Radamson, H. H. and Shastin, V. N.},
abstractNote = {The results of measurements of the total terahertz-range photoluminescence of Group-V donors (phosphorus, antimony, bismuth, arsenic) in bulk silicon and SiGe/Si heterostructures depending on the excitation intensity are presented. The signal of bulk silicon was also measured as a function of uniaxial stress. The results of measurement of the dependence of the spontaneous emission intensity on the uniaxial stress is in rather good agreement with theoretical calculations of the relaxation times of excited states of donors in bulk silicon. Comparative measurements of the spontaneous emission from various strained heterostructures showed that the photoluminescence signal is caused by donor-doped silicon regions.},
doi = {10.1134/S1063782615010273},
journal = {Semiconductors},
number = 1,
volume = 49,
place = {United States},
year = {Thu Jan 15 00:00:00 EST 2015},
month = {Thu Jan 15 00:00:00 EST 2015}
}