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Title: Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates

Abstract

It is demonstrated using X-ray diffraction and atomic force microscopy that elastic stresses in GeSi layers on Si (115) substrates relax more effectively than in the same layers on Si (001) substrates. This fact is attributed to the predominant contribution of one of the (111) slip planes on the (115) cut. The atomicforce-microscopy image of the GeSi/Si(115) surface reveals unidirectional slip planes, while the GeSi/Si(001) image contains a grid of orthogonal lines and defects at the points of their intersection. As a result, thick GeSi layers on Si (115) have a reduced surface roughness. A technique for calculating the parameters of relaxation of the layer on the Si (115) substrate using X-ray diffraction data is discussed.

Authors:
; ; ; ; ;  [1]
  1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
Publication Date:
OSTI Identifier:
22470142
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 1; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; GERMANIUM SILICIDES; LAYERS; RELAXATION; ROUGHNESS; SILICON; SLIP; STRESSES; SUBSTRATES; SURFACES; X-RAY DIFFRACTION

Citation Formats

Drozdov, Yu. N., E-mail: drozdyu@ipmras.ru, Drozdov, M. N., Yunin, P. A., Yurasov, D. V., Shaleev, M. A., and Novikov, A. V.. Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates. United States: N. p., 2015. Web. doi:10.1134/S1063782615010066.
Drozdov, Yu. N., E-mail: drozdyu@ipmras.ru, Drozdov, M. N., Yunin, P. A., Yurasov, D. V., Shaleev, M. A., & Novikov, A. V.. Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates. United States. doi:10.1134/S1063782615010066.
Drozdov, Yu. N., E-mail: drozdyu@ipmras.ru, Drozdov, M. N., Yunin, P. A., Yurasov, D. V., Shaleev, M. A., and Novikov, A. V.. Thu . "Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates". United States. doi:10.1134/S1063782615010066.
@article{osti_22470142,
title = {Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates},
author = {Drozdov, Yu. N., E-mail: drozdyu@ipmras.ru and Drozdov, M. N. and Yunin, P. A. and Yurasov, D. V. and Shaleev, M. A. and Novikov, A. V.},
abstractNote = {It is demonstrated using X-ray diffraction and atomic force microscopy that elastic stresses in GeSi layers on Si (115) substrates relax more effectively than in the same layers on Si (001) substrates. This fact is attributed to the predominant contribution of one of the (111) slip planes on the (115) cut. The atomicforce-microscopy image of the GeSi/Si(115) surface reveals unidirectional slip planes, while the GeSi/Si(001) image contains a grid of orthogonal lines and defects at the points of their intersection. As a result, thick GeSi layers on Si (115) have a reduced surface roughness. A technique for calculating the parameters of relaxation of the layer on the Si (115) substrate using X-ray diffraction data is discussed.},
doi = {10.1134/S1063782615010066},
journal = {Semiconductors},
number = 1,
volume = 49,
place = {United States},
year = {Thu Jan 15 00:00:00 EST 2015},
month = {Thu Jan 15 00:00:00 EST 2015}
}
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