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Title: Efficient single-photon emitters based on Bragg microcavities containing selectively positioned InAs quantum dots

Abstract

A semiconductor Bragg microcavity structure for single photon emitters is designed and implemented. The design provides the efficient current pumping of selectively positioned InAs quantum dots within a micrometer-size aperture, high external quantum yield, and low divergence of the emitted radiation.

Authors:
; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ;  [1]
  1. Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
Publication Date:
OSTI Identifier:
22470139
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 1; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; BRAGG REFLECTION; EMISSION; INDIUM ARSENIDES; PHOTONS; QUANTUM DOTS; SEMICONDUCTOR MATERIALS

Citation Formats

Gaisler, V. A., E-mail: haisler@isp.nsc.ru, Gaisler, A. V., Jaroshevich, A. S., Derebezov, I. A., Kachanova, M. M., Zhivodkov, Yu. A., Gavrilova, T. A., Medvedev, A. S., Nenasheva, L. A., Grachev, K. V., Sandyrev, V. K., Kozhuhov, A. S., Shayahmetov, V. M., Kalagin, A. K., Bakarov, A. K., Dmitriev, D. V., Toropov, A. I., Shcheglov, D. V., Latyshev, A. V., and Aseev, A. L. Efficient single-photon emitters based on Bragg microcavities containing selectively positioned InAs quantum dots. United States: N. p., 2015. Web. doi:10.1134/S1063782615010091.
Gaisler, V. A., E-mail: haisler@isp.nsc.ru, Gaisler, A. V., Jaroshevich, A. S., Derebezov, I. A., Kachanova, M. M., Zhivodkov, Yu. A., Gavrilova, T. A., Medvedev, A. S., Nenasheva, L. A., Grachev, K. V., Sandyrev, V. K., Kozhuhov, A. S., Shayahmetov, V. M., Kalagin, A. K., Bakarov, A. K., Dmitriev, D. V., Toropov, A. I., Shcheglov, D. V., Latyshev, A. V., & Aseev, A. L. Efficient single-photon emitters based on Bragg microcavities containing selectively positioned InAs quantum dots. United States. doi:10.1134/S1063782615010091.
Gaisler, V. A., E-mail: haisler@isp.nsc.ru, Gaisler, A. V., Jaroshevich, A. S., Derebezov, I. A., Kachanova, M. M., Zhivodkov, Yu. A., Gavrilova, T. A., Medvedev, A. S., Nenasheva, L. A., Grachev, K. V., Sandyrev, V. K., Kozhuhov, A. S., Shayahmetov, V. M., Kalagin, A. K., Bakarov, A. K., Dmitriev, D. V., Toropov, A. I., Shcheglov, D. V., Latyshev, A. V., and Aseev, A. L. Thu . "Efficient single-photon emitters based on Bragg microcavities containing selectively positioned InAs quantum dots". United States. doi:10.1134/S1063782615010091.
@article{osti_22470139,
title = {Efficient single-photon emitters based on Bragg microcavities containing selectively positioned InAs quantum dots},
author = {Gaisler, V. A., E-mail: haisler@isp.nsc.ru and Gaisler, A. V. and Jaroshevich, A. S. and Derebezov, I. A. and Kachanova, M. M. and Zhivodkov, Yu. A. and Gavrilova, T. A. and Medvedev, A. S. and Nenasheva, L. A. and Grachev, K. V. and Sandyrev, V. K. and Kozhuhov, A. S. and Shayahmetov, V. M. and Kalagin, A. K. and Bakarov, A. K. and Dmitriev, D. V. and Toropov, A. I. and Shcheglov, D. V. and Latyshev, A. V. and Aseev, A. L.},
abstractNote = {A semiconductor Bragg microcavity structure for single photon emitters is designed and implemented. The design provides the efficient current pumping of selectively positioned InAs quantum dots within a micrometer-size aperture, high external quantum yield, and low divergence of the emitted radiation.},
doi = {10.1134/S1063782615010091},
journal = {Semiconductors},
number = 1,
volume = 49,
place = {United States},
year = {Thu Jan 15 00:00:00 EST 2015},
month = {Thu Jan 15 00:00:00 EST 2015}
}