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Title: Raman spectroscopy of InGaAs/GaAs nanoheterostructures δ-doped with Mn

Abstract

The results of complex studies of InGaAs/GaAs nanoheterostructures δ-doped with Mn are reported. The structures are grown by metal-organic vapor-phase epitaxy in combination with laser deposition. By confocal Raman spectroscopy, it is shown that the low-temperature δ-doped GaAs cap layers are of higher crystal quality compared to uniformly doped layers. Scattering of light in the coupled phonon-plasmon mode is observed. The appearance of this mode is conditioned by the diffusion of manganese from the δ-layer. The thickness of the cap layer is found to be d{sub c} ≈ 9–20 nm, optimal for attainment of the highest photoluminescence intensity of the quantum well and the highest layer concentration of holes by doping with manganese.

Authors:
 [1]; ; ; ;  [2]; ;  [1];  [3]
  1. Lobachevsky State University of Nizhni Novgorod (Russian Federation)
  2. Lobachevsky State University of Nizhni Novgorod, Physical Technical Research Institute (Russian Federation)
  3. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
Publication Date:
OSTI Identifier:
22470129
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 1; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; CRYSTALS; DEPOSITION; DIFFUSION; DOPED MATERIALS; GALLIUM ARSENIDES; HETEROJUNCTIONS; HOLES; INDIUM ARSENIDES; LASER RADIATION; LAYERS; MANGANESE; ORGANOMETALLIC COMPOUNDS; PHONONS; PHOTOLUMINESCENCE; PLASMONS; QUANTUM WELLS; RAMAN SPECTROSCOPY; VAPOR PHASE EPITAXY

Citation Formats

Plankina, S. M., E-mail: plankina@phys.unn.ru, Vikhrova, O. V., Danilov, Yu. A., Zvonkov, B. N., Kalentyeva, I. L., Nezhdanov, A. V., Chunin, I. I., and Yunin, P. A.. Raman spectroscopy of InGaAs/GaAs nanoheterostructures δ-doped with Mn. United States: N. p., 2015. Web. doi:10.1134/S1063782615010200.
Plankina, S. M., E-mail: plankina@phys.unn.ru, Vikhrova, O. V., Danilov, Yu. A., Zvonkov, B. N., Kalentyeva, I. L., Nezhdanov, A. V., Chunin, I. I., & Yunin, P. A.. Raman spectroscopy of InGaAs/GaAs nanoheterostructures δ-doped with Mn. United States. doi:10.1134/S1063782615010200.
Plankina, S. M., E-mail: plankina@phys.unn.ru, Vikhrova, O. V., Danilov, Yu. A., Zvonkov, B. N., Kalentyeva, I. L., Nezhdanov, A. V., Chunin, I. I., and Yunin, P. A.. Thu . "Raman spectroscopy of InGaAs/GaAs nanoheterostructures δ-doped with Mn". United States. doi:10.1134/S1063782615010200.
@article{osti_22470129,
title = {Raman spectroscopy of InGaAs/GaAs nanoheterostructures δ-doped with Mn},
author = {Plankina, S. M., E-mail: plankina@phys.unn.ru and Vikhrova, O. V. and Danilov, Yu. A. and Zvonkov, B. N. and Kalentyeva, I. L. and Nezhdanov, A. V. and Chunin, I. I. and Yunin, P. A.},
abstractNote = {The results of complex studies of InGaAs/GaAs nanoheterostructures δ-doped with Mn are reported. The structures are grown by metal-organic vapor-phase epitaxy in combination with laser deposition. By confocal Raman spectroscopy, it is shown that the low-temperature δ-doped GaAs cap layers are of higher crystal quality compared to uniformly doped layers. Scattering of light in the coupled phonon-plasmon mode is observed. The appearance of this mode is conditioned by the diffusion of manganese from the δ-layer. The thickness of the cap layer is found to be d{sub c} ≈ 9–20 nm, optimal for attainment of the highest photoluminescence intensity of the quantum well and the highest layer concentration of holes by doping with manganese.},
doi = {10.1134/S1063782615010200},
journal = {Semiconductors},
number = 1,
volume = 49,
place = {United States},
year = {Thu Jan 15 00:00:00 EST 2015},
month = {Thu Jan 15 00:00:00 EST 2015}
}