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Title: Molecular beam epitaxy of III-P{sub x}As{sub 1−x} solid solutions: Mechanism of composition formation in the sublattice of a group V element

Abstract

The effect of substrate temperature, As{sub 2} and P{sub 2} molecular flux densities, and growth rate on the composition of III-P{sub x}As{sub 1−x} solid solution layers prepared by molecular beam epitaxy is experimentally investigated. Experimental data in a wide range of growth conditions are analyzed. The results obtained are presented in the form of a kinetic model for describing the process of formation of the composition in the Group V sublattice of the III-P{sub x}As{sub 1−x} solid solution upon molecular beam epitaxy. The model can be used for choosing the growth conditions of the III-P{sub x}As{sub 1−x} (001) solid-solution layers of a specified composition.

Authors:
; ; ; ;  [1]
  1. Russian Academy of Sciences, Siberian Branch, Rzhanov Institute of Semiconductor Physics (Russian Federation)
Publication Date:
OSTI Identifier:
22470081
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; ARSENIC; CONCENTRATION RATIO; CRYSTAL GROWTH; CRYSTAL LATTICES; FLUX DENSITY; LAYERS; MOLECULAR BEAM EPITAXY; PHOSPHIDES; PHOSPHORUS; RARE EARTH COMPOUNDS; SOLID SOLUTIONS; SUBSTRATES; TEMPERATURE DEPENDENCE; X-RAY SPECTROSCOPY

Citation Formats

Emelyanov, E. A., E-mail: e2a@isp.nsc.ru, Putyato, M. A., Semyagin, B. R., Feklin, D. F., and Preobrazhensky, V. V. Molecular beam epitaxy of III-P{sub x}As{sub 1−x} solid solutions: Mechanism of composition formation in the sublattice of a group V element. United States: N. p., 2015. Web. doi:10.1134/S1063782615020062.
Emelyanov, E. A., E-mail: e2a@isp.nsc.ru, Putyato, M. A., Semyagin, B. R., Feklin, D. F., & Preobrazhensky, V. V. Molecular beam epitaxy of III-P{sub x}As{sub 1−x} solid solutions: Mechanism of composition formation in the sublattice of a group V element. United States. doi:10.1134/S1063782615020062.
Emelyanov, E. A., E-mail: e2a@isp.nsc.ru, Putyato, M. A., Semyagin, B. R., Feklin, D. F., and Preobrazhensky, V. V. Sun . "Molecular beam epitaxy of III-P{sub x}As{sub 1−x} solid solutions: Mechanism of composition formation in the sublattice of a group V element". United States. doi:10.1134/S1063782615020062.
@article{osti_22470081,
title = {Molecular beam epitaxy of III-P{sub x}As{sub 1−x} solid solutions: Mechanism of composition formation in the sublattice of a group V element},
author = {Emelyanov, E. A., E-mail: e2a@isp.nsc.ru and Putyato, M. A. and Semyagin, B. R. and Feklin, D. F. and Preobrazhensky, V. V.},
abstractNote = {The effect of substrate temperature, As{sub 2} and P{sub 2} molecular flux densities, and growth rate on the composition of III-P{sub x}As{sub 1−x} solid solution layers prepared by molecular beam epitaxy is experimentally investigated. Experimental data in a wide range of growth conditions are analyzed. The results obtained are presented in the form of a kinetic model for describing the process of formation of the composition in the Group V sublattice of the III-P{sub x}As{sub 1−x} solid solution upon molecular beam epitaxy. The model can be used for choosing the growth conditions of the III-P{sub x}As{sub 1−x} (001) solid-solution layers of a specified composition.},
doi = {10.1134/S1063782615020062},
journal = {Semiconductors},
number = 2,
volume = 49,
place = {United States},
year = {Sun Feb 15 00:00:00 EST 2015},
month = {Sun Feb 15 00:00:00 EST 2015}
}