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Title: Electron-electron interaction and the universality of critical indices for quantum Hall effect plateau-plateau transitions in n-InGaAs/GaAs nanostructures with double quantum wells

Abstract

The dependences of the longitudinal and Hall resistances on a magnetic field in the integer quantum Hall effect regime in n-InGaAs/GaAs heterostructures with a double quantum well are measured in the range of magnetic fields B = 0–16 T and temperatures T = 0.05–4.2 K, before and after infrared illumination. Analysis of the temperature dependence of the width of transitions between plateaus of the quantum Hall effect is performed in the scope of the scaling hypothesis allowing for electron-electron interaction effects.

Authors:
; ; ; ; ;  [1]
  1. Russian Academy of Sciences, Institute of Metal Physics, Ural Branch (Russian Federation)
Publication Date:
OSTI Identifier:
22470077
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ELECTRIC CONDUCTIVITY; ELECTRON-ELECTRON COUPLING; GALLIUM ARSENIDES; HALL EFFECT; HETEROJUNCTIONS; HYPOTHESIS; ILLUMINANCE; INDIUM ARSENIDES; INFRARED RADIATION; MAGNETIC FIELDS; N-TYPE CONDUCTORS; QUANTUM WELLS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K

Citation Formats

Arapov, Yu. G., Gudina, S. V., E-mail: svpopova@imp.uran.ru, Klepikova, A. S., Neverov, V. N., Shelushinina, N. G., and Yakunin, M. V. Electron-electron interaction and the universality of critical indices for quantum Hall effect plateau-plateau transitions in n-InGaAs/GaAs nanostructures with double quantum wells. United States: N. p., 2015. Web. doi:10.1134/S1063782615020037.
Arapov, Yu. G., Gudina, S. V., E-mail: svpopova@imp.uran.ru, Klepikova, A. S., Neverov, V. N., Shelushinina, N. G., & Yakunin, M. V. Electron-electron interaction and the universality of critical indices for quantum Hall effect plateau-plateau transitions in n-InGaAs/GaAs nanostructures with double quantum wells. United States. doi:10.1134/S1063782615020037.
Arapov, Yu. G., Gudina, S. V., E-mail: svpopova@imp.uran.ru, Klepikova, A. S., Neverov, V. N., Shelushinina, N. G., and Yakunin, M. V. 2015. "Electron-electron interaction and the universality of critical indices for quantum Hall effect plateau-plateau transitions in n-InGaAs/GaAs nanostructures with double quantum wells". United States. doi:10.1134/S1063782615020037.
@article{osti_22470077,
title = {Electron-electron interaction and the universality of critical indices for quantum Hall effect plateau-plateau transitions in n-InGaAs/GaAs nanostructures with double quantum wells},
author = {Arapov, Yu. G. and Gudina, S. V., E-mail: svpopova@imp.uran.ru and Klepikova, A. S. and Neverov, V. N. and Shelushinina, N. G. and Yakunin, M. V.},
abstractNote = {The dependences of the longitudinal and Hall resistances on a magnetic field in the integer quantum Hall effect regime in n-InGaAs/GaAs heterostructures with a double quantum well are measured in the range of magnetic fields B = 0–16 T and temperatures T = 0.05–4.2 K, before and after infrared illumination. Analysis of the temperature dependence of the width of transitions between plateaus of the quantum Hall effect is performed in the scope of the scaling hypothesis allowing for electron-electron interaction effects.},
doi = {10.1134/S1063782615020037},
journal = {Semiconductors},
number = 2,
volume = 49,
place = {United States},
year = 2015,
month = 2
}
  • No abstract prepared.
  • The longitudinal {rho}{sub xx}(B) and Hall {rho}{sub xy}(B) magnetoresistances are investigated experimentally in the integer quantum Hall effect (QHE) regime in n-InGaAs/GaAs double quantum well nanostructures in the range of magnetic fields B = (0-16) T and temperatures T = (0.05-70) K before and after IR illumination. The results are evaluated within the scaling hypothesis with regard to electron-electron interaction.
  • The effect of external electric field on interband optical transitions in single In{sub x}Ga{sub 1-x}As/GaAs quantum wells is studied by electroreflectance spectroscopy. A procedure is suggested for separating the contribution of particular exciton transitions to the complicated modulation spectrum. Nontrivial field dependences of the probability of optical transitions forbidden by the symmetry are observed experimentally. The data are compared with the corresponding theoretical dependences. The strength of the internal electric field in the region of the quantum well is determined from Frantz-Keldysh's oscillations. Under certain electric fields, the probability of transitions forbidden with no field is higher than the probabilitymore » of transitions allowed by the symmetry.« less
  • We report the observation of stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on Si(001) substrates with the application of a relaxed Ge buffer layer. Stimulated emission is observed at 77 K under pulsed optical pumping at a wavelength of 1.11 μm, i.e., in the transparency range of bulk silicon. In similar InGaAs/GaAsSb/GaAs structures grown on GaAs substrates, room-temperature stimulated emission is observed at 1.17 μm. The results obtained are promising for integration of the structures into silicon-based optoelectronics.
  • The dependences of the longitudinal and Hall resistances on a magnetic field in n-InGaAs/GaAs heterostructures with a single and double quantum wells after infrared illumination are measured in the range of magnetic fields Ð’ = 0–16 T and temperatures T = 0.05–4.2 K. Analysis of the experimental results was carried out on a base of two-parameter scaling hypothesis for the integer quantum Hall effect. The value of the second (irrelevant) critical exponent of the theory of two-parameter scaling was estimated.