Electronelectron interaction and the universality of critical indices for quantum Hall effect plateauplateau transitions in nInGaAs/GaAs nanostructures with double quantum wells
Abstract
The dependences of the longitudinal and Hall resistances on a magnetic field in the integer quantum Hall effect regime in nInGaAs/GaAs heterostructures with a double quantum well are measured in the range of magnetic fields B = 0–16 T and temperatures T = 0.05–4.2 K, before and after infrared illumination. Analysis of the temperature dependence of the width of transitions between plateaus of the quantum Hall effect is performed in the scope of the scaling hypothesis allowing for electronelectron interaction effects.
 Authors:
 Russian Academy of Sciences, Institute of Metal Physics, Ural Branch (Russian Federation)
 Publication Date:
 OSTI Identifier:
 22470077
 Resource Type:
 Journal Article
 Resource Relation:
 Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
 Country of Publication:
 United States
 Language:
 English
 Subject:
 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ELECTRIC CONDUCTIVITY; ELECTRONELECTRON COUPLING; GALLIUM ARSENIDES; HALL EFFECT; HETEROJUNCTIONS; HYPOTHESIS; ILLUMINANCE; INDIUM ARSENIDES; INFRARED RADIATION; MAGNETIC FIELDS; NTYPE CONDUCTORS; QUANTUM WELLS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 00000013 K
Citation Formats
Arapov, Yu. G., Gudina, S. V., Email: svpopova@imp.uran.ru, Klepikova, A. S., Neverov, V. N., Shelushinina, N. G., and Yakunin, M. V. Electronelectron interaction and the universality of critical indices for quantum Hall effect plateauplateau transitions in nInGaAs/GaAs nanostructures with double quantum wells. United States: N. p., 2015.
Web. doi:10.1134/S1063782615020037.
Arapov, Yu. G., Gudina, S. V., Email: svpopova@imp.uran.ru, Klepikova, A. S., Neverov, V. N., Shelushinina, N. G., & Yakunin, M. V. Electronelectron interaction and the universality of critical indices for quantum Hall effect plateauplateau transitions in nInGaAs/GaAs nanostructures with double quantum wells. United States. doi:10.1134/S1063782615020037.
Arapov, Yu. G., Gudina, S. V., Email: svpopova@imp.uran.ru, Klepikova, A. S., Neverov, V. N., Shelushinina, N. G., and Yakunin, M. V. 2015.
"Electronelectron interaction and the universality of critical indices for quantum Hall effect plateauplateau transitions in nInGaAs/GaAs nanostructures with double quantum wells". United States.
doi:10.1134/S1063782615020037.
@article{osti_22470077,
title = {Electronelectron interaction and the universality of critical indices for quantum Hall effect plateauplateau transitions in nInGaAs/GaAs nanostructures with double quantum wells},
author = {Arapov, Yu. G. and Gudina, S. V., Email: svpopova@imp.uran.ru and Klepikova, A. S. and Neverov, V. N. and Shelushinina, N. G. and Yakunin, M. V.},
abstractNote = {The dependences of the longitudinal and Hall resistances on a magnetic field in the integer quantum Hall effect regime in nInGaAs/GaAs heterostructures with a double quantum well are measured in the range of magnetic fields B = 0–16 T and temperatures T = 0.05–4.2 K, before and after infrared illumination. Analysis of the temperature dependence of the width of transitions between plateaus of the quantum Hall effect is performed in the scope of the scaling hypothesis allowing for electronelectron interaction effects.},
doi = {10.1134/S1063782615020037},
journal = {Semiconductors},
number = 2,
volume = 49,
place = {United States},
year = 2015,
month = 2
}
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