Effect of the direct capture of holes with the emission of optical phonons on impurity-photoconductivity relaxation in p-Si:B
- Russian Academy of Sciences, Institute of Physics of Microstructures (Russian Federation)
A theoretical model developed for interpretation of the results of measurements of the impurity-photoconductivity relaxation in p-Si:B under pulsed optical excitation by a narrow-band tunable source of radiation in “heating” (10–500 V/cm) electric fields is presented. The model takes into account the capture of holes at the ground and lower excited states of boron with optical-phonon emission. It is shown that the dependence of the photoconductivity-relaxation time on the electric-field intensity can be unsteady taking into account these processes.
- OSTI ID:
- 22470076
- Journal Information:
- Semiconductors, Vol. 49, Issue 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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