skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an In{sub x}Ga{sub 1−x}As quantum well with InAs inserts

Abstract

HEMT structures with In{sub 0.53}Ga{sub 0.47}As quantum well are synthesized using molecular-beam epitaxy on InP substrates. The structures are double-side Si δ-doped so that two dimensionally-quantized subbands are occupied. The effect of the central InAs nanoinsert in the quantum well on the electron effective masses m* and mobilities in each subband is studied. For experimental determination of m*, the quantum μ{sub q} and transport μ{sub t} mobilities of the two-dimensional electron gas in each dimensionally-quantized subband, the Shubnikov-de Haas effect is measured at two temperatures of 4.2 and 8.4 K. The electron effective masses are determined by the temperature dependence of the oscillation amplitudes, separating the oscillations of each dimensionally-quantized subband. The Fourier spectra of oscillations are used to determine the electron mobilities μ{sub q} and μ{sub t} in each dimensionally-quantized subband. It is shown that m* decreases as the InAs-nanoinsert thickness d in the In{sub 0.53}Ga{sub 0.47}As quantum well and electron mobilities increase. The maximum electron mobility is observed at the insert thickness d = 3.4 nm.

Authors:
; ;  [1]; ; ; ;  [2]
  1. Moscow State University (Russian Federation)
  2. Russian Academy of Sciences, Institute of Ultrahigh Frequency Semiconductor Electronics (Russian Federation)
Publication Date:
OSTI Identifier:
22470074
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; DOPED MATERIALS; EFFECTIVE MASS; ELECTRON GAS; ELECTRON MOBILITY; ELECTRONS; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; MOLECULAR BEAM EPITAXY; OSCILLATIONS; QUANTUM WELLS; SHUBNIKOV-DE HAAS EFFECT; SUBSTRATES; TEMPERATURE DEPENDENCE; TWO-DIMENSIONAL SYSTEMS; X-RAY SPECTROSCOPY

Citation Formats

Kulbachinskii, V. A., E-mail: kulb@mig.phys.msu.ru, Oveshnikov, L. N., Lunin, R. A., Yuzeeva, N. A., Galiev, G. B., Klimov, E. A., and Maltsev, P. P. Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an In{sub x}Ga{sub 1−x}As quantum well with InAs inserts. United States: N. p., 2015. Web. doi:10.1134/S1063782615020165.
Kulbachinskii, V. A., E-mail: kulb@mig.phys.msu.ru, Oveshnikov, L. N., Lunin, R. A., Yuzeeva, N. A., Galiev, G. B., Klimov, E. A., & Maltsev, P. P. Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an In{sub x}Ga{sub 1−x}As quantum well with InAs inserts. United States. doi:10.1134/S1063782615020165.
Kulbachinskii, V. A., E-mail: kulb@mig.phys.msu.ru, Oveshnikov, L. N., Lunin, R. A., Yuzeeva, N. A., Galiev, G. B., Klimov, E. A., and Maltsev, P. P. Sun . "Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an In{sub x}Ga{sub 1−x}As quantum well with InAs inserts". United States. doi:10.1134/S1063782615020165.
@article{osti_22470074,
title = {Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an In{sub x}Ga{sub 1−x}As quantum well with InAs inserts},
author = {Kulbachinskii, V. A., E-mail: kulb@mig.phys.msu.ru and Oveshnikov, L. N. and Lunin, R. A. and Yuzeeva, N. A. and Galiev, G. B. and Klimov, E. A. and Maltsev, P. P.},
abstractNote = {HEMT structures with In{sub 0.53}Ga{sub 0.47}As quantum well are synthesized using molecular-beam epitaxy on InP substrates. The structures are double-side Si δ-doped so that two dimensionally-quantized subbands are occupied. The effect of the central InAs nanoinsert in the quantum well on the electron effective masses m* and mobilities in each subband is studied. For experimental determination of m*, the quantum μ{sub q} and transport μ{sub t} mobilities of the two-dimensional electron gas in each dimensionally-quantized subband, the Shubnikov-de Haas effect is measured at two temperatures of 4.2 and 8.4 K. The electron effective masses are determined by the temperature dependence of the oscillation amplitudes, separating the oscillations of each dimensionally-quantized subband. The Fourier spectra of oscillations are used to determine the electron mobilities μ{sub q} and μ{sub t} in each dimensionally-quantized subband. It is shown that m* decreases as the InAs-nanoinsert thickness d in the In{sub 0.53}Ga{sub 0.47}As quantum well and electron mobilities increase. The maximum electron mobility is observed at the insert thickness d = 3.4 nm.},
doi = {10.1134/S1063782615020165},
journal = {Semiconductors},
number = 2,
volume = 49,
place = {United States},
year = {Sun Feb 15 00:00:00 EST 2015},
month = {Sun Feb 15 00:00:00 EST 2015}
}
  • A complex study of the effect ofintroduction of nanoscale InAs inserts of different thicknesses into an In{sub 0.53}Ga{sub 0.47}As quantum well on the electrical properties and structural features of In{sub 0.50}Al{sub 0.50}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.50}Al{sub 0.50}As nanoheterostructures with bilateral {delta}-Si doping grown on InP substrates has been performed. The layers of nanoheterostructures with a weak lattice mismatch are found to be equally (cube-on-cube) oriented. The introduction of a nanoscale InAs insert leads to an increase in mobility. At an insert thickness of about 1.8 nm, the effect of increasing mobility is saturated due to structural deterioration. The segregation of themore » second (apparently, wurtzite) phase is revealed; this process, as well as the formation of other defects in the nanoheterostructure layers, is due to local strains caused by variations of the indium content in the layers.« less
  • A complex investigation of structural and electrical properties of In{sub 0.52}Al{sub 0.48}As/In{sub y}Ga{sub 1−y}As/In{sub 0.52}Al{sub 0.48}As nanoheterostructures on InP substrates containing thin InAs and GaAs inserts in a quantum well (QW) has been performed. The GaAs nanolayers are grown at the QW boundaries between InGaAs and InAlAs layers, while the double InAs inserts are grown in InGaAs layers symmetrically with respect to the QW center. The layer and interface structures have been studied by transmission electron microscopy. It is shown that, when using the proposed epitaxial growth conditions, the introduction of ∼1.2-nm-thick InAs nanoinserts into the InGaAs QW and amore » ∼1-nm-thick GaAs nanobarrier at the QW boundaries does not induce structural defects. The diffusion of the InAlAs/InGaAs interface (2–3 monolayers) and InAs/InGaAs nanoinsert interface (1–2 monolayers) has been estimated. Measured Hall mobilities and electron concentrations in structures with different combinations of InAs and GaAs inserts have been analyzed using calculated energy band diagrams and electron density distributions. It is found that the photoluminescence spectra of the structures under study have differences caused by specific structural features of coupled QWs (specifically, the change in the In molar fraction due to InAs inserts and the change in the QW thickness due to GaAs transition barriers.« less
  • The photoluminescence spectra of modulation-doped InAlAs/InGaAs/InAlAs heterostructures with quantum wells containing thin strained InAs and GaAs inserts are investigated. It is established that the insertion of pair InAs layers and/ or a GaAs transition barriers with a thickness of 1 nm into a quantum well leads to a change in the form and energy position of the photoluminescence spectra as compared with a uniform In{sub 0.53}Ga{sub 0.47}As quantum well. Simulation of the band structure shows that this change is caused by a variation in the energy and wave functions of holes. It is demonstrated that the use of InAs insertsmore » leads to the localization of heavy holes near the InAs layers and reduces the energy of optical transitions, while the use of GaAs transition barriers can lead to inversion of the positions of the light- and heavy-hole subbands in the quantum well. A technique for separately controlling the light- and heavy-hole states by varying the thickness and position of the GaAs and InAs inserts in the quantum well is suggested.« less
  • A novel method for determining the local concentration of Al in the Al/sub x/Ga/sub 1-//sub x/As layer of Al/sub x/Ga/sub 1-//sub x/As-GaAs multiple quantum well structures is reported. By scanning a 10 A electron beam across the interface, the (200) dark-field scanning transmission electron microscopy (STEM) image shows the contrast of the Al/sub x/Ga/sub 1-//sub x/As-GaAs multilayer since the intensity of the (200) diffraction is sensitive to the Al concentration. The line scan intensity profile of the (200) diffraction, along a uniform specimen region of known thickness, shows the intensity variation of the (200) diffraction and reflects the local contentmore » of Al in each region. The simulation of the nanodiffraction patterns produces a chart of the (200) diffraction intensity versus the Al concentration for the determination of the local change of the Al concentration. A molecular beam epitaxy grown Al/sub x/Ga/sub 1-//sub x/As-GaAs specimen (x = 0.57 as determined from Raman spectroscopy) is tested and the dark-field STEM studies show two thin layers of x = 0.46 at the 1/3 and 2/3 height level within every Al/sub x/Ga/sub 1-//sub x/As layer.« less
  • Data are presented showing that it is possible to photopump and operate a quantum well heterostructure laser at equivalent current densities (J/sub eq/) as low as 70 A/cm/sup 2/. Continuous 300-K laser operation of a single 60-A GaAs (x = 0) quantum well in the center of a approx.0.12-..mu..m-thick x'approx.0.30 Al/sub x/'Ga/sub 1-x/'As waveguide (and carrier reservoir), which is confined by x''approx.0.85 Al/sub x/''Ga/sub 1-x/''As layers, is demonstrated at I/sub eq/approx.0.4 mA (168 W/cm/sup 2/, J/sub eq/approx.70 A/cm/sup 2/). These quantum well heterostructures are grown by organometallic vapor phase epitaxy.