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Title: Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an In{sub x}Ga{sub 1−x}As quantum well with InAs inserts

Abstract

HEMT structures with In{sub 0.53}Ga{sub 0.47}As quantum well are synthesized using molecular-beam epitaxy on InP substrates. The structures are double-side Si δ-doped so that two dimensionally-quantized subbands are occupied. The effect of the central InAs nanoinsert in the quantum well on the electron effective masses m* and mobilities in each subband is studied. For experimental determination of m*, the quantum μ{sub q} and transport μ{sub t} mobilities of the two-dimensional electron gas in each dimensionally-quantized subband, the Shubnikov-de Haas effect is measured at two temperatures of 4.2 and 8.4 K. The electron effective masses are determined by the temperature dependence of the oscillation amplitudes, separating the oscillations of each dimensionally-quantized subband. The Fourier spectra of oscillations are used to determine the electron mobilities μ{sub q} and μ{sub t} in each dimensionally-quantized subband. It is shown that m* decreases as the InAs-nanoinsert thickness d in the In{sub 0.53}Ga{sub 0.47}As quantum well and electron mobilities increase. The maximum electron mobility is observed at the insert thickness d = 3.4 nm.

Authors:
; ;  [1]; ; ; ;  [2]
  1. Moscow State University (Russian Federation)
  2. Russian Academy of Sciences, Institute of Ultrahigh Frequency Semiconductor Electronics (Russian Federation)
Publication Date:
OSTI Identifier:
22470074
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; DOPED MATERIALS; EFFECTIVE MASS; ELECTRON GAS; ELECTRON MOBILITY; ELECTRONS; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; MOLECULAR BEAM EPITAXY; OSCILLATIONS; QUANTUM WELLS; SHUBNIKOV-DE HAAS EFFECT; SUBSTRATES; TEMPERATURE DEPENDENCE; TWO-DIMENSIONAL SYSTEMS; X-RAY SPECTROSCOPY

Citation Formats

Kulbachinskii, V. A., E-mail: kulb@mig.phys.msu.ru, Oveshnikov, L. N., Lunin, R. A., Yuzeeva, N. A., Galiev, G. B., Klimov, E. A., and Maltsev, P. P. Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an In{sub x}Ga{sub 1−x}As quantum well with InAs inserts. United States: N. p., 2015. Web. doi:10.1134/S1063782615020165.
Kulbachinskii, V. A., E-mail: kulb@mig.phys.msu.ru, Oveshnikov, L. N., Lunin, R. A., Yuzeeva, N. A., Galiev, G. B., Klimov, E. A., & Maltsev, P. P. Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an In{sub x}Ga{sub 1−x}As quantum well with InAs inserts. United States. doi:10.1134/S1063782615020165.
Kulbachinskii, V. A., E-mail: kulb@mig.phys.msu.ru, Oveshnikov, L. N., Lunin, R. A., Yuzeeva, N. A., Galiev, G. B., Klimov, E. A., and Maltsev, P. P. Sun . "Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an In{sub x}Ga{sub 1−x}As quantum well with InAs inserts". United States. doi:10.1134/S1063782615020165.
@article{osti_22470074,
title = {Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an In{sub x}Ga{sub 1−x}As quantum well with InAs inserts},
author = {Kulbachinskii, V. A., E-mail: kulb@mig.phys.msu.ru and Oveshnikov, L. N. and Lunin, R. A. and Yuzeeva, N. A. and Galiev, G. B. and Klimov, E. A. and Maltsev, P. P.},
abstractNote = {HEMT structures with In{sub 0.53}Ga{sub 0.47}As quantum well are synthesized using molecular-beam epitaxy on InP substrates. The structures are double-side Si δ-doped so that two dimensionally-quantized subbands are occupied. The effect of the central InAs nanoinsert in the quantum well on the electron effective masses m* and mobilities in each subband is studied. For experimental determination of m*, the quantum μ{sub q} and transport μ{sub t} mobilities of the two-dimensional electron gas in each dimensionally-quantized subband, the Shubnikov-de Haas effect is measured at two temperatures of 4.2 and 8.4 K. The electron effective masses are determined by the temperature dependence of the oscillation amplitudes, separating the oscillations of each dimensionally-quantized subband. The Fourier spectra of oscillations are used to determine the electron mobilities μ{sub q} and μ{sub t} in each dimensionally-quantized subband. It is shown that m* decreases as the InAs-nanoinsert thickness d in the In{sub 0.53}Ga{sub 0.47}As quantum well and electron mobilities increase. The maximum electron mobility is observed at the insert thickness d = 3.4 nm.},
doi = {10.1134/S1063782615020165},
journal = {Semiconductors},
number = 2,
volume = 49,
place = {United States},
year = {Sun Feb 15 00:00:00 EST 2015},
month = {Sun Feb 15 00:00:00 EST 2015}
}