skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriers

Abstract

The photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistor heterostructures with donor-acceptor-doped AlGaAs barriers is studied. It is found that the introduction of additional p{sup +}-doped AlGaAs layers into the design brings about the appearance of new bands in the photoluminescence spectra. These bands are identified as resulting from transitions (i) in donor-acceptor pairs in doped AlGaAs layers and (ii) between the conduction subband and acceptor levels in the undoped InGaAs quantum well.

Authors:
; ; ;  [1]
  1. Russian Academy of Sciences, Institute for Semiconductor Physics, Siberian Branch (Russian Federation)
Publication Date:
OSTI Identifier:
22470071
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM ARSENIDES; DOPED MATERIALS; ELECTRON MOBILITY; ELECTRONIC STRUCTURE; EMISSION SPECTRA; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; LAYERS; PHOTOLUMINESCENCE; QUANTUM WELLS; TRANSISTORS

Citation Formats

Gulyaev, D. V., E-mail: gulyaev@isp.nsc.ru, Zhuravlev, K. S., Bakarov, A. K., and Toropov, A. I.. Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriers. United States: N. p., 2015. Web. doi:10.1134/S1063782615020104.
Gulyaev, D. V., E-mail: gulyaev@isp.nsc.ru, Zhuravlev, K. S., Bakarov, A. K., & Toropov, A. I.. Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriers. United States. doi:10.1134/S1063782615020104.
Gulyaev, D. V., E-mail: gulyaev@isp.nsc.ru, Zhuravlev, K. S., Bakarov, A. K., and Toropov, A. I.. Sun . "Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriers". United States. doi:10.1134/S1063782615020104.
@article{osti_22470071,
title = {Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriers},
author = {Gulyaev, D. V., E-mail: gulyaev@isp.nsc.ru and Zhuravlev, K. S. and Bakarov, A. K. and Toropov, A. I.},
abstractNote = {The photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistor heterostructures with donor-acceptor-doped AlGaAs barriers is studied. It is found that the introduction of additional p{sup +}-doped AlGaAs layers into the design brings about the appearance of new bands in the photoluminescence spectra. These bands are identified as resulting from transitions (i) in donor-acceptor pairs in doped AlGaAs layers and (ii) between the conduction subband and acceptor levels in the undoped InGaAs quantum well.},
doi = {10.1134/S1063782615020104},
journal = {Semiconductors},
number = 2,
volume = 49,
place = {United States},
year = {Sun Feb 15 00:00:00 EST 2015},
month = {Sun Feb 15 00:00:00 EST 2015}
}
  • The pseudomorphic AlGaAs/InGaAs/AlGaAs heterostructure {delta}-doped with silicon on both sides and used for fabrication of high-power transistors is optimized to obtain a high concentration n{sub s} and mobility of two-dimensional electron gas in the quantum well (n{sub s} {approx} 3 x 10{sup 12} cm{sup -2}). Electrical and structural characteristics of the samples grown by molecular-beam epitaxy with various doping levels are studied. It is shown that the mobility and concentration of electrons varies as doping level is increased and the subbands of dimensional quantization are sequentially filled. In order to analyze the distribution of electrons in subbands of the heterostructure,more » the Shubnikov-de Haas oscillations at the liquid helium temperature were studied. The quality of the heterostructure layers was assessed using the method of X-ray diffraction. The data of photoluminescence spectroscopy are in good agreement with the results of calculations of the band structure.« less
  • Hall electrical properties measured by the van der Pauw method and low-temperature photoluminescence (77 K PL) spectra of pseudomorphic GaAs/In{sub y}Ga{sub l}-{sub y}As/AlGaAs modulation-doped field-effect transistor-type heterostructures grown by molecular-beam epitaxy were compared. By using these two characterization methods, the influences of the growth temperature T{sub s}, the InGaAs quantum-well channel thickness d{sub ch}, and its indium composition y were studied. interesting correlations were established between their 77 K PL spectra and their transport properties measured either in the dark or under while-light illumination. The PL spectra exhibit one or two bands which are attributed to transitions from electronic statesmore » belonging to the first or to the second subband formed in the conductions quantum well, the second transition at higher energy being observed only when the two-dimensional concentration exceeds a critical value n{sub c} which, in the dark, is {approximately} 2.4X10{sup 12} cm{sup {minus}2}(i.e., d{sub ch}{approx}108 {Angstrom}) for the homogeneously doped heterostructures with y=0.25. 27 refs., 10 figs.« less
  • We have investigated the correlation between the structure of and the nonradiative recombination at defects in AlGaAs/InGaAs/GaAs heterostructures using scanning cathodoluminescence (CL) and transmission electron microscopy (TEM). It is shown that the dark-line defects seen in scanning CL images do not always correspond to individual misfit dislocations even for relatively low mismatched epilayers. CL and TEM images from the same area reveal that there are structures which do correlate to the dark lines seen in CL. The density of dislocations at the interface determines which structure dominates the CL image. At very low misfit, the dark lines correspond to singlemore » 60/sup 0/ or edge dislocations, whereas at higher misfit the dark lines correspond to groups of dislocations. Contrary to previous studies in GaAlAsP/GaAlAs semiconductor heterostructures (J. Microsc. 118, 255 (1980)), we have found that edge dislocations at AlGaAs/InGaAs and InGaAs/GaAs interfaces are higher nonradiative recombination sites than 60/sup 0/ dislocations. TEM micrographs show that edge dislocations form more readily along one <110> direction, possibly explaining differences in residual elastic strain measurements along different <110> directions.« less
  • Double pulse doped ({delta}-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined by the Hall method as 6550 and 6000 cm{sup 2}/(V s) at sheet electron densities of 3.00 x 10{sup 12} and 3.36 x 10{sup 12} cm{sup -2}, respectively. HEMT heterostructures fabricated in a single process feature high uniformity of structural and electrical characteristics over the entire area of wafers 76.2 mm in diameter and high reproducibility of characteristics from process to process.
  • Gallium arsenide layers doped with high concentrations of Be and Si by molecular-beam epitaxy are studied by photoluminescence (PL) spectroscopy. PL peaks from doped layers are observed at energies significantly lower than the band-gap of GaAs. The growth and doping conditions suggest that the origin of these peaks is different from that of low energy PL peaks, which were observed in earlier studies and attributed to impurity-vacancy complexes. The dependence of the peak energy on the temperature and the annealing is found to differ from that of the peaks attributed to impurity-vacancy complexes. On the basis of these observations, itmore » is suggested that the low energy peaks are attributed to short range ordered arrangements of impurity ions. This possibility is examined by calculations of the PL spectra with models of pairs of acceptor and donor delta-doped layers and PL experiments of a superlattice of pairs of Be and Si delta-doped layers.« less