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Title: Plasmon-induced enhancement of yellow-red luminescence in InGaN/Au nanocomposites

Abstract

A significant (by up to a factor of 7) increase in the internal quantum efficiency of luminescence is achieved at room temperature in semiconductor-metal-insulator hybrid structures fabricated by the successive deposition of gold and Si{sub 3}N{sub 4} over an array of InGaN nanoblocks, grown by molecular-beam epitaxy. The observed effect can be accounted for by the resonant interaction of excitons localized in InGaN nanoblocks with localized surface-plasmon modes in gold intrusions embedded into InGaN and Si{sub 3}N{sub 4}.

Authors:
; ; ; ; ; ;  [1]
  1. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22470068
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; DEPOSITION; EXCITONS; GALLIUM NITRIDES; GOLD; INDIUM COMPOUNDS; LUMINESCENCE; MOLECULAR BEAM EPITAXY; NANOCOMPOSITES; PLASMONS; PLUTONIC ROCKS; QUANTUM EFFICIENCY; SEMICONDUCTOR MATERIALS; SILICON NITRIDES; SURFACES; TEMPERATURE RANGE 0273-0400 K; WATER INFLUX

Citation Formats

Belyaev, K. G., E-mail: belyaev.kirill@mail.ioffe.ru, Usikova, A. A., Jmerik, V. N., Kop’ev, P. S., Ivanov, S. V., Toropov, A. A., and Brunkov, P. N. Plasmon-induced enhancement of yellow-red luminescence in InGaN/Au nanocomposites. United States: N. p., 2015. Web. doi:10.1134/S1063782615020049.
Belyaev, K. G., E-mail: belyaev.kirill@mail.ioffe.ru, Usikova, A. A., Jmerik, V. N., Kop’ev, P. S., Ivanov, S. V., Toropov, A. A., & Brunkov, P. N. Plasmon-induced enhancement of yellow-red luminescence in InGaN/Au nanocomposites. United States. doi:10.1134/S1063782615020049.
Belyaev, K. G., E-mail: belyaev.kirill@mail.ioffe.ru, Usikova, A. A., Jmerik, V. N., Kop’ev, P. S., Ivanov, S. V., Toropov, A. A., and Brunkov, P. N. Sun . "Plasmon-induced enhancement of yellow-red luminescence in InGaN/Au nanocomposites". United States. doi:10.1134/S1063782615020049.
@article{osti_22470068,
title = {Plasmon-induced enhancement of yellow-red luminescence in InGaN/Au nanocomposites},
author = {Belyaev, K. G., E-mail: belyaev.kirill@mail.ioffe.ru and Usikova, A. A. and Jmerik, V. N. and Kop’ev, P. S. and Ivanov, S. V. and Toropov, A. A. and Brunkov, P. N.},
abstractNote = {A significant (by up to a factor of 7) increase in the internal quantum efficiency of luminescence is achieved at room temperature in semiconductor-metal-insulator hybrid structures fabricated by the successive deposition of gold and Si{sub 3}N{sub 4} over an array of InGaN nanoblocks, grown by molecular-beam epitaxy. The observed effect can be accounted for by the resonant interaction of excitons localized in InGaN nanoblocks with localized surface-plasmon modes in gold intrusions embedded into InGaN and Si{sub 3}N{sub 4}.},
doi = {10.1134/S1063782615020049},
journal = {Semiconductors},
number = 2,
volume = 49,
place = {United States},
year = {Sun Feb 15 00:00:00 EST 2015},
month = {Sun Feb 15 00:00:00 EST 2015}
}