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Title: Features of photoconversion in highly efficient silicon solar cells

Abstract

The photoconversion efficiency η in highly efficient silicon-based solar cells (SCs) is analyzed depending on the total surface-recombination rate S{sub s} on illuminated and rear surfaces. Solar cells based on silicon p-n junctions and α-Si:H or α-SiC:H-Si heterojunctions (so-called HIT structures) are considered in a unified approach. It is shown that a common feature of these SCs is an increased open-circuit voltage V{sub oc} associated with an additional contribution of the rear surface. Within an approach based on analysis of the physical features of photoconversion in SCs, taking into account the main recombination mechanisms, including Shockley-Read-Hall recombination, radiative recombination, surface recombination, recombination in the space-charge region, and band-to-band Auger recombination, expressions for the photoconversion efficiency of such SCs are obtained. The developed theory is compared with experiments, including those for SCs with record parameters, e.g., η = 25% and 24.7% for SCs with a p-n junction for HIT structures, respectively, under AM1.5 conditions. By comparing theory and experiment, the values of S{sub s} achieved as a result of recombination-loss minimization by various methods are determined. The results of calculations of the maximum possible value η{sub max} in silicon SCs are compared with the data of other papers. Good agreement ismore » observed.« less

Authors:
 [1];  [2]; ; ; ;  [1]
  1. National Academy of Sciences, Lashkaryov Institute of Semiconductor Physics (Ukraine)
  2. Faculty of Science, University of Ontario, Institute of Technology (Canada)
Publication Date:
OSTI Identifier:
22470065
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 30 DIRECT ENERGY CONVERSION; AUGER EFFECT; COMPARATIVE EVALUATIONS; EFFICIENCY; ELECTRIC POTENTIAL; HALL EFFECT; HETEROJUNCTIONS; PHOTOVOLTAIC CONVERSION; P-N JUNCTIONS; RECOMBINATION; SILICON; SILICON CARBIDES; SILICON SOLAR CELLS; SPACE CHARGE; SURFACES

Citation Formats

Sachenko, A. V., E-mail: sach@isp.kiev.ua, Shkrebtii, A. I., Korkishko, R. M., Kostylyov, V. P., Kulish, N. R., and Sokolovskyi, I. O. Features of photoconversion in highly efficient silicon solar cells. United States: N. p., 2015. Web. doi:10.1134/S1063782615020189.
Sachenko, A. V., E-mail: sach@isp.kiev.ua, Shkrebtii, A. I., Korkishko, R. M., Kostylyov, V. P., Kulish, N. R., & Sokolovskyi, I. O. Features of photoconversion in highly efficient silicon solar cells. United States. doi:10.1134/S1063782615020189.
Sachenko, A. V., E-mail: sach@isp.kiev.ua, Shkrebtii, A. I., Korkishko, R. M., Kostylyov, V. P., Kulish, N. R., and Sokolovskyi, I. O. Sun . "Features of photoconversion in highly efficient silicon solar cells". United States. doi:10.1134/S1063782615020189.
@article{osti_22470065,
title = {Features of photoconversion in highly efficient silicon solar cells},
author = {Sachenko, A. V., E-mail: sach@isp.kiev.ua and Shkrebtii, A. I. and Korkishko, R. M. and Kostylyov, V. P. and Kulish, N. R. and Sokolovskyi, I. O.},
abstractNote = {The photoconversion efficiency η in highly efficient silicon-based solar cells (SCs) is analyzed depending on the total surface-recombination rate S{sub s} on illuminated and rear surfaces. Solar cells based on silicon p-n junctions and α-Si:H or α-SiC:H-Si heterojunctions (so-called HIT structures) are considered in a unified approach. It is shown that a common feature of these SCs is an increased open-circuit voltage V{sub oc} associated with an additional contribution of the rear surface. Within an approach based on analysis of the physical features of photoconversion in SCs, taking into account the main recombination mechanisms, including Shockley-Read-Hall recombination, radiative recombination, surface recombination, recombination in the space-charge region, and band-to-band Auger recombination, expressions for the photoconversion efficiency of such SCs are obtained. The developed theory is compared with experiments, including those for SCs with record parameters, e.g., η = 25% and 24.7% for SCs with a p-n junction for HIT structures, respectively, under AM1.5 conditions. By comparing theory and experiment, the values of S{sub s} achieved as a result of recombination-loss minimization by various methods are determined. The results of calculations of the maximum possible value η{sub max} in silicon SCs are compared with the data of other papers. Good agreement is observed.},
doi = {10.1134/S1063782615020189},
journal = {Semiconductors},
number = 2,
volume = 49,
place = {United States},
year = {Sun Feb 15 00:00:00 EST 2015},
month = {Sun Feb 15 00:00:00 EST 2015}
}