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Title: Dominant factors of the laser gettering of silicon wafers

Abstract

The laser gettering of silicon wafers is experimentally investigated. The typical gettering parameters are considered. The surfaces of laser-treated silicon wafers are investigated by microscopy. When studying the effect of laser radiation on silicon wafers during gettering, a group of factors determining the conditions of interaction between the laser beam and silicon-wafer surface and affecting the final result of treatment are selected. The main factors determining the gettering efficiency are revealed. Limitations on the desired value of the getter-layer capacity on surfaces with insufficiently high cleanness (for example, ground or matte) are established.

Authors:
 [1];  [2];  [3]
  1. Vitebsk State University (Belarus)
  2. SPDNPUP Spektrkompleks (Belarus)
  3. Belarus State Agrarian Technical University (Belarus)
Publication Date:
OSTI Identifier:
22470064
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CAPACITY; EFFICIENCY; GETTERING; LASER RADIATION; LAYERS; MICROSCOPY; SILICON; SURFACES

Citation Formats

Bokhan, Yu. I., E-mail: bokhan@vsu.by, E-mail: yuibokhan@gmail.com, Kamenkov, V. S., and Tolochko, N. K. Dominant factors of the laser gettering of silicon wafers. United States: N. p., 2015. Web. doi:10.1134/S1063782615020050.
Bokhan, Yu. I., E-mail: bokhan@vsu.by, E-mail: yuibokhan@gmail.com, Kamenkov, V. S., & Tolochko, N. K. Dominant factors of the laser gettering of silicon wafers. United States. doi:10.1134/S1063782615020050.
Bokhan, Yu. I., E-mail: bokhan@vsu.by, E-mail: yuibokhan@gmail.com, Kamenkov, V. S., and Tolochko, N. K. Sun . "Dominant factors of the laser gettering of silicon wafers". United States. doi:10.1134/S1063782615020050.
@article{osti_22470064,
title = {Dominant factors of the laser gettering of silicon wafers},
author = {Bokhan, Yu. I., E-mail: bokhan@vsu.by, E-mail: yuibokhan@gmail.com and Kamenkov, V. S. and Tolochko, N. K.},
abstractNote = {The laser gettering of silicon wafers is experimentally investigated. The typical gettering parameters are considered. The surfaces of laser-treated silicon wafers are investigated by microscopy. When studying the effect of laser radiation on silicon wafers during gettering, a group of factors determining the conditions of interaction between the laser beam and silicon-wafer surface and affecting the final result of treatment are selected. The main factors determining the gettering efficiency are revealed. Limitations on the desired value of the getter-layer capacity on surfaces with insufficiently high cleanness (for example, ground or matte) are established.},
doi = {10.1134/S1063782615020050},
journal = {Semiconductors},
number = 2,
volume = 49,
place = {United States},
year = {Sun Feb 15 00:00:00 EST 2015},
month = {Sun Feb 15 00:00:00 EST 2015}
}