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Title: Growth of EuO/Si and EuO/SrO/Si heteroepitaxial structures by molecular-beam epitaxy

Abstract

Epitaxial EuO thin films with thickness up to 60 nm have been grown by molecular beam epitaxy both on SrO sublayers and directly on Si (001) substrates. Crystal structure has been controlled in situ by reflection high energy electron diffraction. Ex situ studies by X-ray diffraction and Rutherford backscattering have confirmed high crystalline quality of the films.

Authors:
; ; ; ; ;  [1]
  1. National Research Center “Kurchatov Institute” (Russian Federation)
Publication Date:
OSTI Identifier:
22470057
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 1; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; EUROPIUM OXIDES; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; REFLECTION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; STRONTIUM OXIDES; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION

Citation Formats

Teterin, P. E., E-mail: teterin-pe@nrcki.ru, Averyanov, D. V., Sadofyev, Yu. G., E-mail: sadofyev@hotmail.com, Parfenov, O. E., Likhachev, I. A., and Storchak, V. G.. Growth of EuO/Si and EuO/SrO/Si heteroepitaxial structures by molecular-beam epitaxy. United States: N. p., 2015. Web. doi:10.1134/S106378261501025X.
Teterin, P. E., E-mail: teterin-pe@nrcki.ru, Averyanov, D. V., Sadofyev, Yu. G., E-mail: sadofyev@hotmail.com, Parfenov, O. E., Likhachev, I. A., & Storchak, V. G.. Growth of EuO/Si and EuO/SrO/Si heteroepitaxial structures by molecular-beam epitaxy. United States. doi:10.1134/S106378261501025X.
Teterin, P. E., E-mail: teterin-pe@nrcki.ru, Averyanov, D. V., Sadofyev, Yu. G., E-mail: sadofyev@hotmail.com, Parfenov, O. E., Likhachev, I. A., and Storchak, V. G.. Thu . "Growth of EuO/Si and EuO/SrO/Si heteroepitaxial structures by molecular-beam epitaxy". United States. doi:10.1134/S106378261501025X.
@article{osti_22470057,
title = {Growth of EuO/Si and EuO/SrO/Si heteroepitaxial structures by molecular-beam epitaxy},
author = {Teterin, P. E., E-mail: teterin-pe@nrcki.ru and Averyanov, D. V. and Sadofyev, Yu. G., E-mail: sadofyev@hotmail.com and Parfenov, O. E. and Likhachev, I. A. and Storchak, V. G.},
abstractNote = {Epitaxial EuO thin films with thickness up to 60 nm have been grown by molecular beam epitaxy both on SrO sublayers and directly on Si (001) substrates. Crystal structure has been controlled in situ by reflection high energy electron diffraction. Ex situ studies by X-ray diffraction and Rutherford backscattering have confirmed high crystalline quality of the films.},
doi = {10.1134/S106378261501025X},
journal = {Semiconductors},
number = 1,
volume = 49,
place = {United States},
year = {Thu Jan 15 00:00:00 EST 2015},
month = {Thu Jan 15 00:00:00 EST 2015}
}