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Title: Investigation of surface potential in the V-defect region of MBE Cd{sub x}Hg{sub 1−x}Te film

Abstract

Atomic-force microscopy is used to investigate the distribution of the contact-potential difference (surface potential) in Cd{sub x}Hg{sub 1−x}Te epitaxial films grown by molecular-beam epitaxy. Modification of the solid-solution composition near the V-defect results in a variation in the contact-potential difference. It is shown that the solid-solution composition varies by ∼0.05 (2.5 at %) towards increasing mercury content in the V-defect region, and a region of mercury depletion by 0.36 at % is observed at the V-defect periphery. From analysis of the surface-potential distribution, it is shown that the Cd{sub x}Hg{sub 1−x}Te epitaxial film contains unform V-defects with a diameter less than 1 μm in addition to macroscopic V-defects.

Authors:
;  [1]
  1. Tomsk State University (Russian Federation)
Publication Date:
OSTI Identifier:
22470053
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 3; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; CADMIUM COMPOUNDS; CONCENTRATION RATIO; CRYSTAL DEFECTS; FILMS; MERCURY TELLURIDES; MODIFICATIONS; MOLECULAR BEAM EPITAXY; SOLID SOLUTIONS; SURFACE POTENTIAL; VARIATIONS

Citation Formats

Novikov, V. A., E-mail: novikovvadim@mail.ru, and Grigoryev, D. V. Investigation of surface potential in the V-defect region of MBE Cd{sub x}Hg{sub 1−x}Te film. United States: N. p., 2015. Web. doi:10.1134/S106378261503015X.
Novikov, V. A., E-mail: novikovvadim@mail.ru, & Grigoryev, D. V. Investigation of surface potential in the V-defect region of MBE Cd{sub x}Hg{sub 1−x}Te film. United States. doi:10.1134/S106378261503015X.
Novikov, V. A., E-mail: novikovvadim@mail.ru, and Grigoryev, D. V. Sun . "Investigation of surface potential in the V-defect region of MBE Cd{sub x}Hg{sub 1−x}Te film". United States. doi:10.1134/S106378261503015X.
@article{osti_22470053,
title = {Investigation of surface potential in the V-defect region of MBE Cd{sub x}Hg{sub 1−x}Te film},
author = {Novikov, V. A., E-mail: novikovvadim@mail.ru and Grigoryev, D. V.},
abstractNote = {Atomic-force microscopy is used to investigate the distribution of the contact-potential difference (surface potential) in Cd{sub x}Hg{sub 1−x}Te epitaxial films grown by molecular-beam epitaxy. Modification of the solid-solution composition near the V-defect results in a variation in the contact-potential difference. It is shown that the solid-solution composition varies by ∼0.05 (2.5 at %) towards increasing mercury content in the V-defect region, and a region of mercury depletion by 0.36 at % is observed at the V-defect periphery. From analysis of the surface-potential distribution, it is shown that the Cd{sub x}Hg{sub 1−x}Te epitaxial film contains unform V-defects with a diameter less than 1 μm in addition to macroscopic V-defects.},
doi = {10.1134/S106378261503015X},
journal = {Semiconductors},
number = 3,
volume = 49,
place = {United States},
year = {Sun Mar 15 00:00:00 EDT 2015},
month = {Sun Mar 15 00:00:00 EDT 2015}
}