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Title: Acceptor states in heteroepitaxial CdHgTe films grown by molecular-beam epitaxy

Abstract

The photoluminescence method is used to study acceptor states in CdHgTe heteroepitaxial films (HEFs) grown by molecular-beam epitaxy. A comparison of the photoluminescence spectra of HEFs grown on GaAs substrates (CdHgTe/GaAs) with the spectra of CdHgTe/Si HEFs demonstrates that acceptor states with energy depths of about 18 and 27 meV are specific to CdHgTe/GaAs HEFs. The possible nature of these states and its relation to the HEF synthesis conditions and, in particular, to the vacancy doping occurring under conditions of a mercury deficiency during the course of epitaxy and postgrowth processing are discussed.

Authors:
; ;  [1]; ;  [2]; ; ;  [3]
  1. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
  2. R&D Institute for Materials SRC Carat (Ukraine)
  3. Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
Publication Date:
OSTI Identifier:
22470045
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 3; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CADMIUM COMPOUNDS; COMPARATIVE EVALUATIONS; CRYSTAL GROWTH; FILMS; GALLIUM ARSENIDES; MERCURY; MERCURY TELLURIDES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SILICON; SUBSTRATES; SYNTHESIS; VACANCIES

Citation Formats

Mynbaev, K. D., Shilyaev, A. V., E-mail: mynkad@mail.ioffe.ru, Bazhenov, N. L., Izhnin, A. I., Izhnin, I. I., Mikhailov, N. N., Varavin, V. S., and Dvoretsky, S. A. Acceptor states in heteroepitaxial CdHgTe films grown by molecular-beam epitaxy. United States: N. p., 2015. Web. doi:10.1134/S1063782615030148.
Mynbaev, K. D., Shilyaev, A. V., E-mail: mynkad@mail.ioffe.ru, Bazhenov, N. L., Izhnin, A. I., Izhnin, I. I., Mikhailov, N. N., Varavin, V. S., & Dvoretsky, S. A. Acceptor states in heteroepitaxial CdHgTe films grown by molecular-beam epitaxy. United States. doi:10.1134/S1063782615030148.
Mynbaev, K. D., Shilyaev, A. V., E-mail: mynkad@mail.ioffe.ru, Bazhenov, N. L., Izhnin, A. I., Izhnin, I. I., Mikhailov, N. N., Varavin, V. S., and Dvoretsky, S. A. Sun . "Acceptor states in heteroepitaxial CdHgTe films grown by molecular-beam epitaxy". United States. doi:10.1134/S1063782615030148.
@article{osti_22470045,
title = {Acceptor states in heteroepitaxial CdHgTe films grown by molecular-beam epitaxy},
author = {Mynbaev, K. D. and Shilyaev, A. V., E-mail: mynkad@mail.ioffe.ru and Bazhenov, N. L. and Izhnin, A. I. and Izhnin, I. I. and Mikhailov, N. N. and Varavin, V. S. and Dvoretsky, S. A.},
abstractNote = {The photoluminescence method is used to study acceptor states in CdHgTe heteroepitaxial films (HEFs) grown by molecular-beam epitaxy. A comparison of the photoluminescence spectra of HEFs grown on GaAs substrates (CdHgTe/GaAs) with the spectra of CdHgTe/Si HEFs demonstrates that acceptor states with energy depths of about 18 and 27 meV are specific to CdHgTe/GaAs HEFs. The possible nature of these states and its relation to the HEF synthesis conditions and, in particular, to the vacancy doping occurring under conditions of a mercury deficiency during the course of epitaxy and postgrowth processing are discussed.},
doi = {10.1134/S1063782615030148},
journal = {Semiconductors},
number = 3,
volume = 49,
place = {United States},
year = {Sun Mar 15 00:00:00 EDT 2015},
month = {Sun Mar 15 00:00:00 EDT 2015}
}