Irradiation of 4H-SiC UV detectors with heavy ions

Journal Article · Wed Apr 15 00:00:00 EDT 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615040132· OSTI ID:22469977

Lebedev, A. A.; Bogdanova, E. ^[1]; Berenquier, B.; Ottaviani, L. ^[2]; Violina, G. N. ^[3]; Skuratov, V. A. ^[4]

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1. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
2. Aix Marseille Université, OPTO-PV, IM2NP, CNRS UMR 7334 (France)
3. St. Petersburg State Electrotechnical University LETI (Russian Federation)
4. Joint Institute for Nuclear Research (Russian Federation)

Ultraviolet (UV) photodetectors based on Schottky barriers to 4H-SiC are formed on lightly doped n-type epitaxial layers grown by the chemical vapor deposition method on commercial substrates. The diode structures are irradiated at 25°C by 167-MeV Xe ions with a mass of 131 amu at a fluence of 6 × 10{sup 9} cm{sup −2}. Comparative studies of the optical and electrical properties of as-grown and irradiated structures with Schottky barriers are carried out in the temperature range 23–180°C. The specific features of changes in the photosensitivity and electrical characteristics of the detector structures are accounted for by the capture of photogenerated carriers into traps formed due to fluctuations of the conduction-band bottom and valence-band top, with subsequent thermal dissociation.

• OSTI ID: 22469977
• Journal Information: Semiconductors, Vol. 49, Issue 4; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
DISSOCIATION
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELECTRONIC STRUCTURE
EPITAXY
IRRADIATION
LAYERS
MEV RANGE
PHOTODETECTORS
PHOTOSENSITIVITY
RADIATION EFFECTS
SILICON CARBIDES
SUBSTRATES
TEMPERATURE DEPENDENCE
TRAPS
ULTRAVIOLET RADIATION
VALENCE
XENON IONS