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Title: GaInP semiconductor compounds doped with the Sb isovalent impurity

Abstract

GaInP{sub 1−x}Sb{sub x} layers containing different Sb fractions are produced by metal-organic vaporphase epitaxy on GaAs and Ge substrates. The charge-carrier mobilities in the GaInP{sub 1−x}Sb{sub x} layers are measured at room temperature and 77 K. The room-temperature charge-carrier mobilities in the GaInP{sub 1−x}Sb{sub x} layers additionally doped with donor and acceptor impurities are measured. The photoluminescence peaks of GaInP{sub 1−x}Sb{sub x} are detected. The influence of the Sb impurity on the band gap and charge-carrier mobility in GaInP is determined.

Authors:
 [1]
  1. OAO Saturn (Russian Federation)
Publication Date:
OSTI Identifier:
22469969
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 49; Journal Issue: 5; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANTIMONY; CARRIER MOBILITY; CHARGE CARRIERS; CONCENTRATION RATIO; DOPED MATERIALS; EPITAXY; GALLIUM ARSENIDES; GERMANIUM; IMPURITIES; LAYERS; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SUBSTRATES; TEMPERATURE DEPENDENCE

Citation Formats

Skachkov, A. F., E-mail: afskachkov@mail.ru. GaInP semiconductor compounds doped with the Sb isovalent impurity. United States: N. p., 2015. Web. doi:10.1134/S1063782615050231.
Skachkov, A. F., E-mail: afskachkov@mail.ru. GaInP semiconductor compounds doped with the Sb isovalent impurity. United States. doi:10.1134/S1063782615050231.
Skachkov, A. F., E-mail: afskachkov@mail.ru. Fri . "GaInP semiconductor compounds doped with the Sb isovalent impurity". United States. doi:10.1134/S1063782615050231.
@article{osti_22469969,
title = {GaInP semiconductor compounds doped with the Sb isovalent impurity},
author = {Skachkov, A. F., E-mail: afskachkov@mail.ru},
abstractNote = {GaInP{sub 1−x}Sb{sub x} layers containing different Sb fractions are produced by metal-organic vaporphase epitaxy on GaAs and Ge substrates. The charge-carrier mobilities in the GaInP{sub 1−x}Sb{sub x} layers are measured at room temperature and 77 K. The room-temperature charge-carrier mobilities in the GaInP{sub 1−x}Sb{sub x} layers additionally doped with donor and acceptor impurities are measured. The photoluminescence peaks of GaInP{sub 1−x}Sb{sub x} are detected. The influence of the Sb impurity on the band gap and charge-carrier mobility in GaInP is determined.},
doi = {10.1134/S1063782615050231},
journal = {Semiconductors},
issn = {1063-7826},
number = 5,
volume = 49,
place = {United States},
year = {2015},
month = {5}
}