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Title: Carriers confinement study of GaNAsBi/GaAs QWs emitting at 1.3 and 1.55 μm

Abstract

Band structures of GaN{sub 0.58y}As{sub 1–1.58y}Bi{sub y}/GaAs quantum wells (QWs) were studied using the band anticrossing model and the envelope function approximation. The confined states energies and the oscillator strengths of interband transitions were determined for well widths L{sub W} and Bi composition y varying in the range of 4–10 nm and 0–0.07 respectively. The emissions 1.3 and 1.55 μm were reached for specific couples (L{sub W}, y). The band anticrossing effect on the in-plane carriers effective mass has been investigated at k = 0. The absorbance spectra were calculated for QWs operating at 1.3 and 1.55 μm.

Authors:
; ; ; ;  [1]
  1. University of Monastir, Faculty of Sciences, Unité de Recherche sur les Hetero-Epitaxies et Applications (Tunisia)
Publication Date:
OSTI Identifier:
22469966
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 49; Journal Issue: 5; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE; APPROXIMATIONS; BISMUTH COMPOUNDS; CHARGE CARRIERS; CONFINEMENT; EFFECTIVE MASS; ELECTRONIC STRUCTURE; ENERGY-LEVEL TRANSITIONS; GALLIUM ARSENIDES; GALLIUM NITRIDES; OSCILLATOR STRENGTHS; QUANTUM WELLS

Citation Formats

Ben Nasr, A., Habchi, M. M., Bilel, C., Rebey, A., E-mail: ahmed.rebey@fsm.rnu.tn, and El Jani, B. Carriers confinement study of GaNAsBi/GaAs QWs emitting at 1.3 and 1.55 μm. United States: N. p., 2015. Web. doi:10.1134/S1063782615050048.
Ben Nasr, A., Habchi, M. M., Bilel, C., Rebey, A., E-mail: ahmed.rebey@fsm.rnu.tn, & El Jani, B. Carriers confinement study of GaNAsBi/GaAs QWs emitting at 1.3 and 1.55 μm. United States. doi:10.1134/S1063782615050048.
Ben Nasr, A., Habchi, M. M., Bilel, C., Rebey, A., E-mail: ahmed.rebey@fsm.rnu.tn, and El Jani, B. Fri . "Carriers confinement study of GaNAsBi/GaAs QWs emitting at 1.3 and 1.55 μm". United States. doi:10.1134/S1063782615050048.
@article{osti_22469966,
title = {Carriers confinement study of GaNAsBi/GaAs QWs emitting at 1.3 and 1.55 μm},
author = {Ben Nasr, A. and Habchi, M. M. and Bilel, C. and Rebey, A., E-mail: ahmed.rebey@fsm.rnu.tn and El Jani, B.},
abstractNote = {Band structures of GaN{sub 0.58y}As{sub 1–1.58y}Bi{sub y}/GaAs quantum wells (QWs) were studied using the band anticrossing model and the envelope function approximation. The confined states energies and the oscillator strengths of interband transitions were determined for well widths L{sub W} and Bi composition y varying in the range of 4–10 nm and 0–0.07 respectively. The emissions 1.3 and 1.55 μm were reached for specific couples (L{sub W}, y). The band anticrossing effect on the in-plane carriers effective mass has been investigated at k = 0. The absorbance spectra were calculated for QWs operating at 1.3 and 1.55 μm.},
doi = {10.1134/S1063782615050048},
journal = {Semiconductors},
issn = {1063-7826},
number = 5,
volume = 49,
place = {United States},
year = {2015},
month = {5}
}