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Title: Effect of nonparabolicity of the electron and light-hole energy spectrum on the optical properties of heterostructures with deep AlSb/InAs{sub 0.86}Sb{sub 0.14}/AlSb quantum wells

Abstract

The optical characteristics of heterostructures with deep quantum wells are studied using the AlSb/InAs{sub 0.86}Sb{sub 0.14}/AlSb structure within the framework of the four-band Kane model with regard to the nonparabolicity of the carrier energy spectrum. It is demonstrated that consideration of the nonparabolicity increases the number of size-quantization levels in the conduction band. At a quantum-well width of 100 Å, the investigated heterostructure contains three size-quantization levels within the parabolic model and six levels within the Kane model. This is due to the fact that the effective mass of high-energy electrons is found to be larger than the mass of electrons at the bottom of the conduction band by a factor of four. It is shown that account for the nonparabolicity only slightly affects the overlap integral for the s and p states, but significantly increases the density of states in the conduction band, which causes considerable growth in the radiation-absorption coefficient.

Authors:
;  [1]
  1. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22469965
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 49; Journal Issue: 5; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION; ALUMINIUM COMPOUNDS; DENSITY OF STATES; EFFECTIVE MASS; ELECTRONS; ENERGY SPECTRA; HETEROJUNCTIONS; HOLES; INDIUM ANTIMONIDES; INDIUM ARSENIDES; OPTICAL PROPERTIES; P STATES; QUANTIZATION; QUANTUM WELLS; VISIBLE RADIATION

Citation Formats

Pavlov, N. V., E-mail: pavlovnv@mail.ioffe.ru, and Zegrya, G. G., E-mail: zegrya@mail.ioffe.ru. Effect of nonparabolicity of the electron and light-hole energy spectrum on the optical properties of heterostructures with deep AlSb/InAs{sub 0.86}Sb{sub 0.14}/AlSb quantum wells. United States: N. p., 2015. Web. doi:10.1134/S106378261505019X.
Pavlov, N. V., E-mail: pavlovnv@mail.ioffe.ru, & Zegrya, G. G., E-mail: zegrya@mail.ioffe.ru. Effect of nonparabolicity of the electron and light-hole energy spectrum on the optical properties of heterostructures with deep AlSb/InAs{sub 0.86}Sb{sub 0.14}/AlSb quantum wells. United States. doi:10.1134/S106378261505019X.
Pavlov, N. V., E-mail: pavlovnv@mail.ioffe.ru, and Zegrya, G. G., E-mail: zegrya@mail.ioffe.ru. Fri . "Effect of nonparabolicity of the electron and light-hole energy spectrum on the optical properties of heterostructures with deep AlSb/InAs{sub 0.86}Sb{sub 0.14}/AlSb quantum wells". United States. doi:10.1134/S106378261505019X.
@article{osti_22469965,
title = {Effect of nonparabolicity of the electron and light-hole energy spectrum on the optical properties of heterostructures with deep AlSb/InAs{sub 0.86}Sb{sub 0.14}/AlSb quantum wells},
author = {Pavlov, N. V., E-mail: pavlovnv@mail.ioffe.ru and Zegrya, G. G., E-mail: zegrya@mail.ioffe.ru},
abstractNote = {The optical characteristics of heterostructures with deep quantum wells are studied using the AlSb/InAs{sub 0.86}Sb{sub 0.14}/AlSb structure within the framework of the four-band Kane model with regard to the nonparabolicity of the carrier energy spectrum. It is demonstrated that consideration of the nonparabolicity increases the number of size-quantization levels in the conduction band. At a quantum-well width of 100 Å, the investigated heterostructure contains three size-quantization levels within the parabolic model and six levels within the Kane model. This is due to the fact that the effective mass of high-energy electrons is found to be larger than the mass of electrons at the bottom of the conduction band by a factor of four. It is shown that account for the nonparabolicity only slightly affects the overlap integral for the s and p states, but significantly increases the density of states in the conduction band, which causes considerable growth in the radiation-absorption coefficient.},
doi = {10.1134/S106378261505019X},
journal = {Semiconductors},
issn = {1063-7826},
number = 5,
volume = 49,
place = {United States},
year = {2015},
month = {5}
}