# On the density of states of disordered epitaxial graphene

## Abstract

The study is concerned with two types of disordered epitaxial graphene: (i) graphene with randomly located carbon vacancies and (ii) structurally amorphous graphene. The former type is considered in the coherent potential approximation, and for the latter type, a model of the density of states is proposed. The effects of two types of substrates, specifically, metal and semiconductor substrates are taken into account. The specific features of the density of states of epitaxial graphene at the Dirac point and the edges of the continuous spectrum are analyzed. It is shown that vacancies in epitaxial graphene formed on the metal substrate bring about logarithmic nulling of the density of states of graphene at the Dirac point and the edges of the continuous spectrum. If the Dirac point corresponds to the middle of the band gap of the semiconductor substrate, the linear trend of the density of states to zero in the vicinity of the Dirac point in defect-free graphene transforms into a logarithmic decrease in the presence of vacancies. In both cases, the graphene-substrate interaction is assumed to be weak (quasi-free graphene). In the study of amorphous epitaxial graphene, a simple model of free amorphous graphene is proposed as the initialmore »

- Authors:

- Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

- Publication Date:

- OSTI Identifier:
- 22469964

- Resource Type:
- Journal Article

- Journal Name:
- Semiconductors

- Additional Journal Information:
- Journal Volume: 49; Journal Issue: 5; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826

- Country of Publication:
- United States

- Language:
- English

- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; AMORPHOUS STATE; APPROXIMATIONS; DENSITY OF STATES; ELECTRON SPECTRA; EPITAXY; GRAPHENE; METALS; PHASE TRANSFORMATIONS; POTENTIALS; SEMICONDUCTOR MATERIALS; SHEETS; SUBSTRATES; VACANCIES

### Citation Formats

```
Davydov, S. Yu., E-mail: Sergei-Davydov@mail.ru.
```*On the density of states of disordered epitaxial graphene*. United States: N. p., 2015.
Web. doi:10.1134/S1063782615050061.

```
Davydov, S. Yu., E-mail: Sergei-Davydov@mail.ru.
```*On the density of states of disordered epitaxial graphene*. United States. doi:10.1134/S1063782615050061.

```
Davydov, S. Yu., E-mail: Sergei-Davydov@mail.ru. Fri .
"On the density of states of disordered epitaxial graphene". United States. doi:10.1134/S1063782615050061.
```

```
@article{osti_22469964,
```

title = {On the density of states of disordered epitaxial graphene},

author = {Davydov, S. Yu., E-mail: Sergei-Davydov@mail.ru},

abstractNote = {The study is concerned with two types of disordered epitaxial graphene: (i) graphene with randomly located carbon vacancies and (ii) structurally amorphous graphene. The former type is considered in the coherent potential approximation, and for the latter type, a model of the density of states is proposed. The effects of two types of substrates, specifically, metal and semiconductor substrates are taken into account. The specific features of the density of states of epitaxial graphene at the Dirac point and the edges of the continuous spectrum are analyzed. It is shown that vacancies in epitaxial graphene formed on the metal substrate bring about logarithmic nulling of the density of states of graphene at the Dirac point and the edges of the continuous spectrum. If the Dirac point corresponds to the middle of the band gap of the semiconductor substrate, the linear trend of the density of states to zero in the vicinity of the Dirac point in defect-free graphene transforms into a logarithmic decrease in the presence of vacancies. In both cases, the graphene-substrate interaction is assumed to be weak (quasi-free graphene). In the study of amorphous epitaxial graphene, a simple model of free amorphous graphene is proposed as the initial model, in which account is taken of the nonzero density of states at the Dirac point, and then the interaction of the graphene sheet with the substrate is taken into consideration. It is shown that, near the Dirac point, the quadratic behavior of the density of states of free amorphous graphene transforms into a linear dependence for amorphous epitaxial graphene. In the study, the density of states of free graphene corresponds to the low-energy approximation of the electron spectrum.},

doi = {10.1134/S1063782615050061},

journal = {Semiconductors},

issn = {1063-7826},

number = 5,

volume = 49,

place = {United States},

year = {2015},

month = {5}

}