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Title: Features of the uniaxial elastic deformation of X-ray-irradiated p-Si crystals

Abstract

Changes in the conductivity of p-Si single-crystals irradiated at room temperature during their mechanical compression and stress relief are studied. It is shown that irradiation is accompanied by the generation of point defects in silicon, which play the role of stoppers for dislocation motion. The effect of “radiation memory” in “electronic” silicon crystals is detected.

Authors:
; ; ;  [1]
  1. Ivan Franko Lviv National University, Department of Electronics (Ukraine)
Publication Date:
OSTI Identifier:
22469962
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 49; Journal Issue: 5; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COMPRESSION; DEFORMATION; DISLOCATIONS; ELECTRIC CONDUCTIVITY; IRRADIATION; MONOCRYSTALS; POINT DEFECTS; P-TYPE CONDUCTORS; SILICON; STRESSES; TEMPERATURE RANGE 0273-0400 K; X RADIATION

Citation Formats

Pavlyk, B. V., Lys, R. M., E-mail: lys-r@ukr.net, Didyk, R. I., and Shykorjak, J. A. Features of the uniaxial elastic deformation of X-ray-irradiated p-Si crystals. United States: N. p., 2015. Web. doi:10.1134/S1063782615050206.
Pavlyk, B. V., Lys, R. M., E-mail: lys-r@ukr.net, Didyk, R. I., & Shykorjak, J. A. Features of the uniaxial elastic deformation of X-ray-irradiated p-Si crystals. United States. doi:10.1134/S1063782615050206.
Pavlyk, B. V., Lys, R. M., E-mail: lys-r@ukr.net, Didyk, R. I., and Shykorjak, J. A. Fri . "Features of the uniaxial elastic deformation of X-ray-irradiated p-Si crystals". United States. doi:10.1134/S1063782615050206.
@article{osti_22469962,
title = {Features of the uniaxial elastic deformation of X-ray-irradiated p-Si crystals},
author = {Pavlyk, B. V. and Lys, R. M., E-mail: lys-r@ukr.net and Didyk, R. I. and Shykorjak, J. A.},
abstractNote = {Changes in the conductivity of p-Si single-crystals irradiated at room temperature during their mechanical compression and stress relief are studied. It is shown that irradiation is accompanied by the generation of point defects in silicon, which play the role of stoppers for dislocation motion. The effect of “radiation memory” in “electronic” silicon crystals is detected.},
doi = {10.1134/S1063782615050206},
journal = {Semiconductors},
issn = {1063-7826},
number = 5,
volume = 49,
place = {United States},
year = {2015},
month = {5}
}