skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Ion implantation of erbium into polycrystalline cadmium telluride

Abstract

The specific features of the ion implantation of polycrystalline cadmium telluride with grains 20–1000 μm in dimensions are studied. The choice of erbium is motivated by the possibility of using rare-earth elements as luminescent “probes” in studies of the defect and impurity composition of materials and modification of the composition by various technological treatments. From the microphotoluminescence data, it is found that, with decreasing crystal-grain dimensions, the degree of radiation stability of the material is increased. Microphotoluminescence topography of the samples shows the efficiency of the rare-earth probe in detecting regions with higher impurity and defect concentrations, including regions of intergrain boundaries.

Authors:
; ;  [1]
  1. Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22469961
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 49; Journal Issue: 5; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CADMIUM TELLURIDES; CONCENTRATION RATIO; EFFICIENCY; EMISSION SPECTRA; ERBIUM; ION IMPLANTATION; MODIFICATIONS; PHASE STABILITY; PHOTOLUMINESCENCE; POLYCRYSTALS; PROBES; TOPOGRAPHY

Citation Formats

Ushakov, V. V., E-mail: ushakov@sci.lebedev.ru, Klevkov, Yu. V., and Dravin, V. A. Ion implantation of erbium into polycrystalline cadmium telluride. United States: N. p., 2015. Web. doi:10.1134/S1063782615050267.
Ushakov, V. V., E-mail: ushakov@sci.lebedev.ru, Klevkov, Yu. V., & Dravin, V. A. Ion implantation of erbium into polycrystalline cadmium telluride. United States. doi:10.1134/S1063782615050267.
Ushakov, V. V., E-mail: ushakov@sci.lebedev.ru, Klevkov, Yu. V., and Dravin, V. A. Fri . "Ion implantation of erbium into polycrystalline cadmium telluride". United States. doi:10.1134/S1063782615050267.
@article{osti_22469961,
title = {Ion implantation of erbium into polycrystalline cadmium telluride},
author = {Ushakov, V. V., E-mail: ushakov@sci.lebedev.ru and Klevkov, Yu. V. and Dravin, V. A.},
abstractNote = {The specific features of the ion implantation of polycrystalline cadmium telluride with grains 20–1000 μm in dimensions are studied. The choice of erbium is motivated by the possibility of using rare-earth elements as luminescent “probes” in studies of the defect and impurity composition of materials and modification of the composition by various technological treatments. From the microphotoluminescence data, it is found that, with decreasing crystal-grain dimensions, the degree of radiation stability of the material is increased. Microphotoluminescence topography of the samples shows the efficiency of the rare-earth probe in detecting regions with higher impurity and defect concentrations, including regions of intergrain boundaries.},
doi = {10.1134/S1063782615050267},
journal = {Semiconductors},
issn = {1063-7826},
number = 5,
volume = 49,
place = {United States},
year = {2015},
month = {5}
}