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Title: Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructure

Abstract

We present the first findings of the silicon vacancy related centers identified in the non-irradiated 6H-SiC nanostructure using the electron spin resonance (ESR) and electrically-detected (ED) ESR technique. This planar 6H-SiC nanostructure represents the ultra-narrow p-type quantum well confined by the δ-barriers heavily doped with boron on the surface of the n-type 6H-SiC(0001) wafer. The new EDESR technique by measuring the only magnetoresistance of the 6H-SiC nanostructure under the high frequency generation from the δ-barriers appears to allow the identification of the isolated silicon vacancy centers as well as the triplet center with spin state S = 1. The same triplet center that is characterized by the large value of the zero-field splitting constant D and anisotropic g-factor is revealed by the ESR (X-band) method. The hyperfine (HF) lines in the ESR and EDESR spectra originating from the HF interaction with the {sup 14}N nucleus seem to attribute this triplet center to the N-V{sub Si} defect.

Authors:
; ;  [1];  [2]; ; ;  [1];  [3]; ;  [2]
  1. Russian Academy of Sciences, Ioffe Physicaltechnical Institute (Russian Federation)
  2. National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)
  3. State Polytechnical University (Russian Federation)
Publication Date:
OSTI Identifier:
22469958
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 49; Journal Issue: 5; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ANISOTROPY; BORON; DOPED MATERIALS; ELECTRON SPIN RESONANCE; HYPERFINE STRUCTURE; IRRADIATION; LANDE FACTOR; MAGNETORESISTANCE; NITROGEN 14; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; QUANTUM WELLS; SILICON; SILICON CARBIDES; SPIN; SURFACES; TRIPLETS; VACANCIES

Citation Formats

Bagraev, N. T., E-mail: Impurity.Dipole@mail.ioffe.ru, Danilovskii, E. Yu., Gets, D. S., Kalabukhova, E. N., Klyachkin, L. E., Koudryavtsev, A. A., Malyarenko, A. M., Mashkov, V. A., Savchenko, D. V., and Shanina, B. D. Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructure. United States: N. p., 2015. Web. doi:10.1134/S1063782615050036.
Bagraev, N. T., E-mail: Impurity.Dipole@mail.ioffe.ru, Danilovskii, E. Yu., Gets, D. S., Kalabukhova, E. N., Klyachkin, L. E., Koudryavtsev, A. A., Malyarenko, A. M., Mashkov, V. A., Savchenko, D. V., & Shanina, B. D. Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructure. United States. doi:10.1134/S1063782615050036.
Bagraev, N. T., E-mail: Impurity.Dipole@mail.ioffe.ru, Danilovskii, E. Yu., Gets, D. S., Kalabukhova, E. N., Klyachkin, L. E., Koudryavtsev, A. A., Malyarenko, A. M., Mashkov, V. A., Savchenko, D. V., and Shanina, B. D. Fri . "Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructure". United States. doi:10.1134/S1063782615050036.
@article{osti_22469958,
title = {Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructure},
author = {Bagraev, N. T., E-mail: Impurity.Dipole@mail.ioffe.ru and Danilovskii, E. Yu. and Gets, D. S. and Kalabukhova, E. N. and Klyachkin, L. E. and Koudryavtsev, A. A. and Malyarenko, A. M. and Mashkov, V. A. and Savchenko, D. V. and Shanina, B. D.},
abstractNote = {We present the first findings of the silicon vacancy related centers identified in the non-irradiated 6H-SiC nanostructure using the electron spin resonance (ESR) and electrically-detected (ED) ESR technique. This planar 6H-SiC nanostructure represents the ultra-narrow p-type quantum well confined by the δ-barriers heavily doped with boron on the surface of the n-type 6H-SiC(0001) wafer. The new EDESR technique by measuring the only magnetoresistance of the 6H-SiC nanostructure under the high frequency generation from the δ-barriers appears to allow the identification of the isolated silicon vacancy centers as well as the triplet center with spin state S = 1. The same triplet center that is characterized by the large value of the zero-field splitting constant D and anisotropic g-factor is revealed by the ESR (X-band) method. The hyperfine (HF) lines in the ESR and EDESR spectra originating from the HF interaction with the {sup 14}N nucleus seem to attribute this triplet center to the N-V{sub Si} defect.},
doi = {10.1134/S1063782615050036},
journal = {Semiconductors},
issn = {1063-7826},
number = 5,
volume = 49,
place = {United States},
year = {2015},
month = {5}
}