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Title: Thermal resistance of ultra-small-diameter disk microlasers

Abstract

The thermal resistance of AlGaAs/GaAs microlasers of the suspended-disk type with a diameter of 1.7–4 μm and InAs/InGaAs quantum dots in the active region is inversely proportional to the squared diameter of the microdisk. The proportionality factor is 3.2 × 10{sup −3} (K cm{sup 2})/W, and the thermal resistance is 120–20°C/mW.

Authors:
;  [1];  [2]; ; ; ; ;  [1]; ;  [2]
  1. St. Petersburg Academic University-Nanotechnology Research and Education Centre (Russian Federation)
  2. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22469954
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 49; Journal Issue: 5; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; GALLIUM ARSENIDES; INDIUM ARSENIDES; QUANTUM DOTS; SEMICONDUCTOR LASERS; THERMAL CONDUCTIVITY

Citation Formats

Zhukov, A. E., E-mail: zhukale@gmail.com, Kryzhanovskaya, N. V., Maximov, M. V., Lipovskii, A. A., Savelyev, A. V., Shostak, I. I., Moiseev, E. I., Kudashova, Yu. V., Kulagina, M. M., and Troshkov, S. I. Thermal resistance of ultra-small-diameter disk microlasers. United States: N. p., 2015. Web. doi:10.1134/S1063782615050279.
Zhukov, A. E., E-mail: zhukale@gmail.com, Kryzhanovskaya, N. V., Maximov, M. V., Lipovskii, A. A., Savelyev, A. V., Shostak, I. I., Moiseev, E. I., Kudashova, Yu. V., Kulagina, M. M., & Troshkov, S. I. Thermal resistance of ultra-small-diameter disk microlasers. United States. doi:10.1134/S1063782615050279.
Zhukov, A. E., E-mail: zhukale@gmail.com, Kryzhanovskaya, N. V., Maximov, M. V., Lipovskii, A. A., Savelyev, A. V., Shostak, I. I., Moiseev, E. I., Kudashova, Yu. V., Kulagina, M. M., and Troshkov, S. I. Fri . "Thermal resistance of ultra-small-diameter disk microlasers". United States. doi:10.1134/S1063782615050279.
@article{osti_22469954,
title = {Thermal resistance of ultra-small-diameter disk microlasers},
author = {Zhukov, A. E., E-mail: zhukale@gmail.com and Kryzhanovskaya, N. V. and Maximov, M. V. and Lipovskii, A. A. and Savelyev, A. V. and Shostak, I. I. and Moiseev, E. I. and Kudashova, Yu. V. and Kulagina, M. M. and Troshkov, S. I.},
abstractNote = {The thermal resistance of AlGaAs/GaAs microlasers of the suspended-disk type with a diameter of 1.7–4 μm and InAs/InGaAs quantum dots in the active region is inversely proportional to the squared diameter of the microdisk. The proportionality factor is 3.2 × 10{sup −3} (K cm{sup 2})/W, and the thermal resistance is 120–20°C/mW.},
doi = {10.1134/S1063782615050279},
journal = {Semiconductors},
issn = {1063-7826},
number = 5,
volume = 49,
place = {United States},
year = {2015},
month = {5}
}