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Title: The Shubnikov-de Haas effect and thermoelectric properties of Tl-doped Sb{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3}

Abstract

The influence of doping with Tl on the Shubnikov-de Haas effect at T = 4.2 K in magnetic fields up to 38 T in p-Sb{sub 2−x}Tl{sub x}Te{sub 3} (x = 0, 0.005, 0.015, and 0.05) and n-Bi{sub 2−x}Tl{sub x}Se{sub 3} (x = 0, 0.01, 0.02, 0.04, and 0.06) single crystals is investigated. Extreme cross-sections of the Fermi surface in both materials decrease upon doping with Tl: the hole concentration decreases in Sb{sub 2−x}Tl{sub x}Te{sub 3} due to the donor effect of Tl and the electron concentration in n-Bi{sub 2−x}Tl{sub x}Se{sub 3} decreases due to the acceptor effect of Tl. The temperature dependences of the Seebeck coefficient, electrical conductivity, thermal conductivity, and dimensionless thermoelectric figure of merit in a temperature range of 77–300 K are measured. The thermal conductivity and electrical conductivity decrease upon doping with Tl both in p-Sb{sub 2−x}Tl{sub x}Te{sub 3} and in n-Bi{sub 2−x}Tl{sub x}Se{sub 3}. The Seebeck coefficient increases in all compositions upon an increase in doping over the entire measured temperature range. The thermoelectric figure of merit increases upon doping with Tl.

Authors:
;  [1]
  1. Moscow State University, Faculty of Physics (Russian Federation)
Publication Date:
OSTI Identifier:
22469900
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 49; Journal Issue: 6; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANTIMONY TELLURIDES; BISMUTH SELENIDES; CONCENTRATION RATIO; CROSS SECTIONS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRONS; FERMI LEVEL; HOLES; MAGNETIC FIELDS; MONOCRYSTALS; SHUBNIKOV-DE HAAS EFFECT; TEMPERATURE DEPENDENCE; THERMAL CONDUCTIVITY; THERMOELECTRIC PROPERTIES

Citation Formats

Kulbachinskii, V. A., E-mail: kulb@mig.phys.msu.ru, Kudryashov, A. A., and Kytin, V. G. The Shubnikov-de Haas effect and thermoelectric properties of Tl-doped Sb{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3}. United States: N. p., 2015. Web. doi:10.1134/S1063782615060135.
Kulbachinskii, V. A., E-mail: kulb@mig.phys.msu.ru, Kudryashov, A. A., & Kytin, V. G. The Shubnikov-de Haas effect and thermoelectric properties of Tl-doped Sb{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3}. United States. https://doi.org/10.1134/S1063782615060135
Kulbachinskii, V. A., E-mail: kulb@mig.phys.msu.ru, Kudryashov, A. A., and Kytin, V. G. Mon . "The Shubnikov-de Haas effect and thermoelectric properties of Tl-doped Sb{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3}". United States. https://doi.org/10.1134/S1063782615060135.
@article{osti_22469900,
title = {The Shubnikov-de Haas effect and thermoelectric properties of Tl-doped Sb{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3}},
author = {Kulbachinskii, V. A., E-mail: kulb@mig.phys.msu.ru and Kudryashov, A. A. and Kytin, V. G.},
abstractNote = {The influence of doping with Tl on the Shubnikov-de Haas effect at T = 4.2 K in magnetic fields up to 38 T in p-Sb{sub 2−x}Tl{sub x}Te{sub 3} (x = 0, 0.005, 0.015, and 0.05) and n-Bi{sub 2−x}Tl{sub x}Se{sub 3} (x = 0, 0.01, 0.02, 0.04, and 0.06) single crystals is investigated. Extreme cross-sections of the Fermi surface in both materials decrease upon doping with Tl: the hole concentration decreases in Sb{sub 2−x}Tl{sub x}Te{sub 3} due to the donor effect of Tl and the electron concentration in n-Bi{sub 2−x}Tl{sub x}Se{sub 3} decreases due to the acceptor effect of Tl. The temperature dependences of the Seebeck coefficient, electrical conductivity, thermal conductivity, and dimensionless thermoelectric figure of merit in a temperature range of 77–300 K are measured. The thermal conductivity and electrical conductivity decrease upon doping with Tl both in p-Sb{sub 2−x}Tl{sub x}Te{sub 3} and in n-Bi{sub 2−x}Tl{sub x}Se{sub 3}. The Seebeck coefficient increases in all compositions upon an increase in doping over the entire measured temperature range. The thermoelectric figure of merit increases upon doping with Tl.},
doi = {10.1134/S1063782615060135},
url = {https://www.osti.gov/biblio/22469900}, journal = {Semiconductors},
issn = {1063-7826},
number = 6,
volume = 49,
place = {United States},
year = {2015},
month = {6}
}