Theory of the electronic structure of substitutional semiconductor alloys: Analytical approaches
Abstract
Methods of predicting the electronic structure of disordered semiconductor alloys involving mainly isoelectronic substitution are reviewed. Special emphasis is placed on analytical methods of studying currently available models of alloys. An approximate equation for the localization threshold of electronic states in the Lifshitz model is considered, and the inaccuracy of this equation is estimated. The contributions of the perturbation potential of an individual impurity and of crystallattice distortions in the vicinity of the impurity center are analyzed on the basis of the Faddeev equations. The contributions of intrinsic impurity potentials and volume effects to the formation of the electronic structure of semiconductor alloys are esti mated. Methods of calculating matrix elements of the perturbation potentials of isoelectronic impurities in alloys with consideration for deformation effects are considered. The procedure of calculating the compositional dependence of the band gap of multicomponent alloys is described. A comparative analysis of various methods for predicting the formation of electronic states bound at individual isoelectronic impurities in semiconductors is conducted. The theory of the energy spectrum of charged impurities in isoelectronic alloys is presented.
 Authors:
 Novgorod State University (Russian Federation)
 Publication Date:
 OSTI Identifier:
 22469845
 Resource Type:
 Journal Article
 Resource Relation:
 Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 7; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
 Country of Publication:
 United States
 Language:
 English
 Subject:
 36 MATERIALS SCIENCE; CRYSTAL LATTICES; DEFORMATION; ELECTRONIC STRUCTURE; ENERGY GAP; ENERGY SPECTRA; FADDEEV EQUATIONS; PERTURBATION THEORY; POTENTIALS; SEMICONDUCTOR MATERIALS
Citation Formats
Zakharov, A. Yu., Email: Anatoly.Zakharov@novsu.ru. Theory of the electronic structure of substitutional semiconductor alloys: Analytical approaches. United States: N. p., 2015.
Web. doi:10.1134/S1063782615070246.
Zakharov, A. Yu., Email: Anatoly.Zakharov@novsu.ru. Theory of the electronic structure of substitutional semiconductor alloys: Analytical approaches. United States. doi:10.1134/S1063782615070246.
Zakharov, A. Yu., Email: Anatoly.Zakharov@novsu.ru. 2015.
"Theory of the electronic structure of substitutional semiconductor alloys: Analytical approaches". United States.
doi:10.1134/S1063782615070246.
@article{osti_22469845,
title = {Theory of the electronic structure of substitutional semiconductor alloys: Analytical approaches},
author = {Zakharov, A. Yu., Email: Anatoly.Zakharov@novsu.ru},
abstractNote = {Methods of predicting the electronic structure of disordered semiconductor alloys involving mainly isoelectronic substitution are reviewed. Special emphasis is placed on analytical methods of studying currently available models of alloys. An approximate equation for the localization threshold of electronic states in the Lifshitz model is considered, and the inaccuracy of this equation is estimated. The contributions of the perturbation potential of an individual impurity and of crystallattice distortions in the vicinity of the impurity center are analyzed on the basis of the Faddeev equations. The contributions of intrinsic impurity potentials and volume effects to the formation of the electronic structure of semiconductor alloys are esti mated. Methods of calculating matrix elements of the perturbation potentials of isoelectronic impurities in alloys with consideration for deformation effects are considered. The procedure of calculating the compositional dependence of the band gap of multicomponent alloys is described. A comparative analysis of various methods for predicting the formation of electronic states bound at individual isoelectronic impurities in semiconductors is conducted. The theory of the energy spectrum of charged impurities in isoelectronic alloys is presented.},
doi = {10.1134/S1063782615070246},
journal = {Semiconductors},
number = 7,
volume = 49,
place = {United States},
year = 2015,
month = 7
}

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