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Title: Nitridation of an unreconstructed and reconstructed (√31 ×√31)R ± 9° (0001) sapphire surface in an ammonia flow

Abstract

This paper is devoted to the study of the nitridation of unreconstructed and reconstructed (√31 ×√31)R ± 9° (0001) sapphire surfaces in an ammonia flow by reflection high-energy electron diffraction (RHEED). The experimental results show that sapphire nitridation occurs on the unreconstructed (1 × 1) surface, which results in AlN phase formation on the substrate surface. However, if sapphire nitridation is preceded by high-temperature annealing (1150°C) resulting in sapphire surface reconstruction with formation of the (√31 ×√31)R ± 9° surface, the crystalline AlN phase on the sapphire surface is not formed during surface exposure to an ammonia flow.

Authors:
; ; ; ;  [1]
  1. Siberian Branch of the Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics (Russian Federation)
Publication Date:
OSTI Identifier:
22469838
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 7; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; AMMONIA; ANNEALING; CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; NITRIDATION; REFLECTION; SAPPHIRE; SUBSTRATES; SURFACES; TEMPERATURE DEPENDENCE

Citation Formats

Milakhina, D. S., E-mail: denironman@mail.ru, Malin, T. V., Mansurov, V. G., Galitsin, Yu. G., and Zhuravlev, K. S., E-mail: zhur@thermo.isp.nsc.ru. Nitridation of an unreconstructed and reconstructed (√31 ×√31)R ± 9° (0001) sapphire surface in an ammonia flow. United States: N. p., 2015. Web. doi:10.1134/S1063782615070180.
Milakhina, D. S., E-mail: denironman@mail.ru, Malin, T. V., Mansurov, V. G., Galitsin, Yu. G., & Zhuravlev, K. S., E-mail: zhur@thermo.isp.nsc.ru. Nitridation of an unreconstructed and reconstructed (√31 ×√31)R ± 9° (0001) sapphire surface in an ammonia flow. United States. doi:10.1134/S1063782615070180.
Milakhina, D. S., E-mail: denironman@mail.ru, Malin, T. V., Mansurov, V. G., Galitsin, Yu. G., and Zhuravlev, K. S., E-mail: zhur@thermo.isp.nsc.ru. Wed . "Nitridation of an unreconstructed and reconstructed (√31 ×√31)R ± 9° (0001) sapphire surface in an ammonia flow". United States. doi:10.1134/S1063782615070180.
@article{osti_22469838,
title = {Nitridation of an unreconstructed and reconstructed (√31 ×√31)R ± 9° (0001) sapphire surface in an ammonia flow},
author = {Milakhina, D. S., E-mail: denironman@mail.ru and Malin, T. V. and Mansurov, V. G. and Galitsin, Yu. G. and Zhuravlev, K. S., E-mail: zhur@thermo.isp.nsc.ru},
abstractNote = {This paper is devoted to the study of the nitridation of unreconstructed and reconstructed (√31 ×√31)R ± 9° (0001) sapphire surfaces in an ammonia flow by reflection high-energy electron diffraction (RHEED). The experimental results show that sapphire nitridation occurs on the unreconstructed (1 × 1) surface, which results in AlN phase formation on the substrate surface. However, if sapphire nitridation is preceded by high-temperature annealing (1150°C) resulting in sapphire surface reconstruction with formation of the (√31 ×√31)R ± 9° surface, the crystalline AlN phase on the sapphire surface is not formed during surface exposure to an ammonia flow.},
doi = {10.1134/S1063782615070180},
journal = {Semiconductors},
number = 7,
volume = 49,
place = {United States},
year = {Wed Jul 15 00:00:00 EDT 2015},
month = {Wed Jul 15 00:00:00 EDT 2015}
}