Effect of the bimodality of a QD array on the optical properties and threshold characteristics of QD lasers

Journal Article · Sat Aug 15 00:00:00 EDT 2015 · Semiconductors

DOI:https://doi.org/10.1134/S106378261508014X· OSTI ID:22469814

Mintairov, S. A.; Kalyuzhnyy, N. A. ^[1]; Rouvimov, S. S. ^[2]; Shernyakov, Yu. M. ^[1]; Payusov, A. S.; Maximov, M. V.; Zhukov, A. E. ^[3]

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1. Russian Academy of Sciences, Ioffe Institute (Russian Federation)
2. University of Notre Dame (United States)
3. Russian Academy of Sciences, St. Petersburg Academic University, Nanotechnology Research and Education Centre (Russian Federation)

Heterostructures with InGaAs quantum dots (QDs) are synthesized on vicinal GaAs (001) substrates. The photoluminescence (PL) spectra and threshold characteristics of edge-emitting QD lasers are studied in the temperature range 10-400 K. The structural properties of QDs are examined by transmission electron microscopy. Analysis of the PL spectra demonstrates the bimodality of the QD array, which leads to an unusual temperature behavior of the PL spectra and threshold current density. A model of the population of a bimodal QD array by carriers, describing the observed phenomena, is considered.

• OSTI ID: 22469814
• Journal Information: Semiconductors, Vol. 49, Issue 8; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL STRUCTURE
EMISSION SPECTRA
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
QUANTUM DOTS
SUBSTRATES
TEMPERATURE DEPENDENCE
THRESHOLD CURRENT
TRANSMISSION ELECTRON MICROSCOPY