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Title: Low-temperature galvanomagnetic studies of nominally undoped germanium subjected to intrinsic photoexcitation

Abstract

The results of studying the heating of charge carriers by an electric field in nominally undoped Ge (with impurity concentrations of (N{sub a} + N{sub g}) ≤ 5 × 10{sup 13} cm{sup –3}) subjected to interband illumination are reported. It is necessary in this situation to take into account two types of free charge carriers. In the case of such generation, the relation between the concentrations of electrons and holes depends to a large extent on the value of the electric field since this field differently affects the recombination coefficients of charge carriers and gives rise to new effects. The results of experimental studies of the conductivity σ and the Hall constant R{sub H} in n-Ge and p-Ge at T = 4.2 K and at different intensities of intrinsic photoexcitation are reported. A model of interband recombination, which takes into account deep-level impurity centers, is suggested for explanation of the results.

Authors:
 [1]
  1. Sholokhov Moscow State Humanitarian University (Russian Federation)
Publication Date:
OSTI Identifier:
22469803
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 9; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHARGE CARRIERS; CONCENTRATION RATIO; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRONS; GERMANIUM; HALL EFFECT; HEATING; HOLES; ILLUMINANCE; IMPURITIES; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; RECOMBINATION

Citation Formats

Bannaya, V. F., E-mail: kurova.f@yandex.ru. Low-temperature galvanomagnetic studies of nominally undoped germanium subjected to intrinsic photoexcitation. United States: N. p., 2015. Web. doi:10.1134/S1063782615090043.
Bannaya, V. F., E-mail: kurova.f@yandex.ru. Low-temperature galvanomagnetic studies of nominally undoped germanium subjected to intrinsic photoexcitation. United States. doi:10.1134/S1063782615090043.
Bannaya, V. F., E-mail: kurova.f@yandex.ru. Tue . "Low-temperature galvanomagnetic studies of nominally undoped germanium subjected to intrinsic photoexcitation". United States. doi:10.1134/S1063782615090043.
@article{osti_22469803,
title = {Low-temperature galvanomagnetic studies of nominally undoped germanium subjected to intrinsic photoexcitation},
author = {Bannaya, V. F., E-mail: kurova.f@yandex.ru},
abstractNote = {The results of studying the heating of charge carriers by an electric field in nominally undoped Ge (with impurity concentrations of (N{sub a} + N{sub g}) ≤ 5 × 10{sup 13} cm{sup –3}) subjected to interband illumination are reported. It is necessary in this situation to take into account two types of free charge carriers. In the case of such generation, the relation between the concentrations of electrons and holes depends to a large extent on the value of the electric field since this field differently affects the recombination coefficients of charge carriers and gives rise to new effects. The results of experimental studies of the conductivity σ and the Hall constant R{sub H} in n-Ge and p-Ge at T = 4.2 K and at different intensities of intrinsic photoexcitation are reported. A model of interband recombination, which takes into account deep-level impurity centers, is suggested for explanation of the results.},
doi = {10.1134/S1063782615090043},
journal = {Semiconductors},
number = 9,
volume = 49,
place = {United States},
year = {Tue Sep 15 00:00:00 EDT 2015},
month = {Tue Sep 15 00:00:00 EDT 2015}
}
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