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Title: Photoluminescence of heterostructures containing an In{sub x}Ga{sub 1–x}As quantum well with a high in content at different excitation powers

Abstract

The results of studies of the photoluminescence spectra of heterostructures containing an In{sub x}Ga{sub 1–x}As quantum well with a high In content x at different laser-radiation powers are reported. It is found that, as the radiation power density is increased, the luminescence spectrum of In{sub 0.70}Al{sub 0.30}As/In{sub 0.76}Ga{sub 0.24}As quantum-well heterostructures exhibits a decrease in the half-width and a shift of the peak to higher energies. It is shown that, for Al{sub 0.27}Ga{sub 0.73}As/In{sub 0.20}Ga{sub 0.80}As quantum-well heterostructures, no shift of the peak and no change in the shape of the spectrum is observed. It is established that the integrated photoluminescence intensity is related to the laser-radiation power density by a power law with the exponent α ≈ 1.3 for heterostructures with x ≈ 0.76, suggesting the predominantly excitonic character of the radiative recombination of charge carriers.

Authors:
; ; ;  [1]
  1. Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation)
Publication Date:
OSTI Identifier:
22469792
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 9; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION SPECTROSCOPY; CHARGE CARRIERS; EMISSION SPECTRA; EMISSION SPECTROSCOPY; EXCITATION; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; LASER RADIATION; PHOTOLUMINESCENCE; POWER DENSITY; QUANTUM WELLS; RECOMBINATION; X-RAY SPECTROSCOPY

Citation Formats

Lavrukhin, D. V., E-mail: denis-lavruhin@mail.ru, Khabibullin, R. A., Ponomarev, D. S., and Maltsev, P. P. Photoluminescence of heterostructures containing an In{sub x}Ga{sub 1–x}As quantum well with a high in content at different excitation powers. United States: N. p., 2015. Web. doi:10.1134/S1063782615090183.
Lavrukhin, D. V., E-mail: denis-lavruhin@mail.ru, Khabibullin, R. A., Ponomarev, D. S., & Maltsev, P. P. Photoluminescence of heterostructures containing an In{sub x}Ga{sub 1–x}As quantum well with a high in content at different excitation powers. United States. doi:10.1134/S1063782615090183.
Lavrukhin, D. V., E-mail: denis-lavruhin@mail.ru, Khabibullin, R. A., Ponomarev, D. S., and Maltsev, P. P. Tue . "Photoluminescence of heterostructures containing an In{sub x}Ga{sub 1–x}As quantum well with a high in content at different excitation powers". United States. doi:10.1134/S1063782615090183.
@article{osti_22469792,
title = {Photoluminescence of heterostructures containing an In{sub x}Ga{sub 1–x}As quantum well with a high in content at different excitation powers},
author = {Lavrukhin, D. V., E-mail: denis-lavruhin@mail.ru and Khabibullin, R. A. and Ponomarev, D. S. and Maltsev, P. P.},
abstractNote = {The results of studies of the photoluminescence spectra of heterostructures containing an In{sub x}Ga{sub 1–x}As quantum well with a high In content x at different laser-radiation powers are reported. It is found that, as the radiation power density is increased, the luminescence spectrum of In{sub 0.70}Al{sub 0.30}As/In{sub 0.76}Ga{sub 0.24}As quantum-well heterostructures exhibits a decrease in the half-width and a shift of the peak to higher energies. It is shown that, for Al{sub 0.27}Ga{sub 0.73}As/In{sub 0.20}Ga{sub 0.80}As quantum-well heterostructures, no shift of the peak and no change in the shape of the spectrum is observed. It is established that the integrated photoluminescence intensity is related to the laser-radiation power density by a power law with the exponent α ≈ 1.3 for heterostructures with x ≈ 0.76, suggesting the predominantly excitonic character of the radiative recombination of charge carriers.},
doi = {10.1134/S1063782615090183},
journal = {Semiconductors},
number = 9,
volume = 49,
place = {United States},
year = {Tue Sep 15 00:00:00 EDT 2015},
month = {Tue Sep 15 00:00:00 EDT 2015}
}
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