Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy

Journal Article · Sun Nov 15 00:00:00 EST 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615110263· OSTI ID:22469703

Bobrov, A. I. ^[1]; Daniltsev, V. M.; Novikov, A. V. ^[2]; Pavlov, D. A. ^[1]; Skorokhodov, E. V.; Shaleev, M. V.; Yunin, P. A. ^[2]

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1. Lobachevsky State University of Nizhny Novgorod (Russian Federation)
2. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

Influence of the Ge layer thickness and annealing conditions on the parameters of relaxed Ge/Si(001) layers grown by molecular beam epitaxy via two-stage growth is investigated. The dependences of the threading dislocation density and surface roughness on the Ge layer thickness, annealing temperature and time, and the presence of a hydrogen atmosphere are obtained. As a result of optimization of the growth and annealing conditions, relaxed Ge/Si(001) layers which are thinner than 1 μm with a low threading dislocation density on the order of 10{sup 7} cm{sup –2} and a root mean square roughness of less than 1 nm are obtained.

• OSTI ID: 22469703
• Journal Information: Semiconductors, Vol. 49, Issue 11; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL GROWTH
DISLOCATIONS
GERMANIUM
HYDROGEN
LAYERS
MOLECULAR BEAM EPITAXY
OPTIMIZATION
ROUGHNESS
SILICON
SURFACES
TEMPERATURE DEPENDENCE