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Title: Vertical heterostructures based on graphene and other 2D materials

Abstract

Recent advances in the fabrication of vertical heterostructures based on graphene and other dielectric and semiconductor single-layer materials, including hexagonal boron nitride and transition-metal dichalcogenides, are reviewed. Significant progress in this field is discussed together with the great prospects for the development of vertical heterostructures for various applications, which are associated, first of all, with reconsideration of the physical principles of the design and operation of device structures based on graphene combined with other 2D materials.

Authors:
 [1]
  1. Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch (Russian Federation)
Publication Date:
OSTI Identifier:
22469624
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 50; Journal Issue: 1; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BORON NITRIDES; CHALCOGENIDES; DIELECTRIC MATERIALS; FABRICATION; GRAPHENE; HETEROJUNCTIONS; HEXAGONAL LATTICES; OPERATION; SEMICONDUCTOR MATERIALS; TRANSITION ELEMENT COMPOUNDS; TWO-DIMENSIONAL SYSTEMS

Citation Formats

Antonova, I. V.. Vertical heterostructures based on graphene and other 2D materials. United States: N. p., 2016. Web. doi:10.1134/S106378261601005X.
Antonova, I. V.. Vertical heterostructures based on graphene and other 2D materials. United States. doi:10.1134/S106378261601005X.
Antonova, I. V.. Fri . "Vertical heterostructures based on graphene and other 2D materials". United States. doi:10.1134/S106378261601005X.
@article{osti_22469624,
title = {Vertical heterostructures based on graphene and other 2D materials},
author = {Antonova, I. V.},
abstractNote = {Recent advances in the fabrication of vertical heterostructures based on graphene and other dielectric and semiconductor single-layer materials, including hexagonal boron nitride and transition-metal dichalcogenides, are reviewed. Significant progress in this field is discussed together with the great prospects for the development of vertical heterostructures for various applications, which are associated, first of all, with reconsideration of the physical principles of the design and operation of device structures based on graphene combined with other 2D materials.},
doi = {10.1134/S106378261601005X},
journal = {Semiconductors},
number = 1,
volume = 50,
place = {United States},
year = {Fri Jan 15 00:00:00 EST 2016},
month = {Fri Jan 15 00:00:00 EST 2016}
}
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