Vertical heterostructures based on graphene and other 2D materials
- Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch (Russian Federation)
Recent advances in the fabrication of vertical heterostructures based on graphene and other dielectric and semiconductor single-layer materials, including hexagonal boron nitride and transition-metal dichalcogenides, are reviewed. Significant progress in this field is discussed together with the great prospects for the development of vertical heterostructures for various applications, which are associated, first of all, with reconsideration of the physical principles of the design and operation of device structures based on graphene combined with other 2D materials.
- OSTI ID:
- 22469624
- Journal Information:
- Semiconductors, Vol. 50, Issue 1; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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