skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Generating and moving Dirac points in a two-dimensional deformed honeycomb lattice arrayed by coupled semiconductor quantum dots

Abstract

Analysis of the electronic properties of a two-dimensional (2D) deformed honeycomb structure arrayed by semiconductor quantum dots (QDs) is conducted theoretically by using tight-binding method in the present paper. Through the compressive or tensile deformation of the honeycomb lattice, the variation of energy spectrum has been explored. We show that, the massless Dirac fermions are generated in this adjustable system and the positions of the Dirac cones as well as slope of the linear dispersions could be manipulated. Furthermore, a clear linear correspondence between the distance of movement d (the distance from the Dirac points to the Brillouin zone corners) and the tunable bond angle α of the lattice are found in this artificial planar QD structure. These results provide the theoretical basis for manipulating Dirac fermions and should be very helpful for the fabrication and application of high-mobility semiconductor QD devices.

Authors:
;  [1];  [2];  [3]
  1. Department of Physics, China University of Mining and Technology, Xuzhou, Jiangsu Province 221116 (China)
  2. School of Mechanics and Civil Engineering, China University of Mining and Technology, Xuzhou, Jiangsu Province 221116 (China)
  3. State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong Province 250100 (China)
Publication Date:
OSTI Identifier:
22454482
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 3; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BOND ANGLE; BRILLOUIN ZONES; DEFORMATION; DISPERSIONS; ENERGY SPECTRA; FERMIONS; HONEYCOMB STRUCTURES; MOBILITY; QUANTUM DOTS; SEMICONDUCTOR MATERIALS

Citation Formats

Peng, Juan, E-mail: pengjuan@cumt.edu.cn, Duan, Yifeng, Chen, PeiJian, and Peng, Yan. Generating and moving Dirac points in a two-dimensional deformed honeycomb lattice arrayed by coupled semiconductor quantum dots. United States: N. p., 2015. Web. doi:10.1063/1.4916272.
Peng, Juan, E-mail: pengjuan@cumt.edu.cn, Duan, Yifeng, Chen, PeiJian, & Peng, Yan. Generating and moving Dirac points in a two-dimensional deformed honeycomb lattice arrayed by coupled semiconductor quantum dots. United States. doi:10.1063/1.4916272.
Peng, Juan, E-mail: pengjuan@cumt.edu.cn, Duan, Yifeng, Chen, PeiJian, and Peng, Yan. Sun . "Generating and moving Dirac points in a two-dimensional deformed honeycomb lattice arrayed by coupled semiconductor quantum dots". United States. doi:10.1063/1.4916272.
@article{osti_22454482,
title = {Generating and moving Dirac points in a two-dimensional deformed honeycomb lattice arrayed by coupled semiconductor quantum dots},
author = {Peng, Juan, E-mail: pengjuan@cumt.edu.cn and Duan, Yifeng and Chen, PeiJian and Peng, Yan},
abstractNote = {Analysis of the electronic properties of a two-dimensional (2D) deformed honeycomb structure arrayed by semiconductor quantum dots (QDs) is conducted theoretically by using tight-binding method in the present paper. Through the compressive or tensile deformation of the honeycomb lattice, the variation of energy spectrum has been explored. We show that, the massless Dirac fermions are generated in this adjustable system and the positions of the Dirac cones as well as slope of the linear dispersions could be manipulated. Furthermore, a clear linear correspondence between the distance of movement d (the distance from the Dirac points to the Brillouin zone corners) and the tunable bond angle α of the lattice are found in this artificial planar QD structure. These results provide the theoretical basis for manipulating Dirac fermions and should be very helpful for the fabrication and application of high-mobility semiconductor QD devices.},
doi = {10.1063/1.4916272},
journal = {AIP Advances},
number = 3,
volume = 5,
place = {United States},
year = {Sun Mar 15 00:00:00 EDT 2015},
month = {Sun Mar 15 00:00:00 EDT 2015}
}