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Title: High indium non-polar InGaN clusters with infrared sensitivity grown by PAMBE

Abstract

Studies on the optical properties of InGaN alloy of relatively higher indium content are of potential interest to understand the effect of indium content on the optical band gap of epitaxial InGaN. We report the growth of self assembled non-polar high indium clusters of In{sub 0.55}Ga{sub 0.45}N over non-polar (11-20) a-plane In{sub 0.17}Ga{sub 0.83}N epilayer grown on a-plane (11-20)GaN/(1-102) r-plane sapphire substrate using plasma assisted molecular beam epitaxy (PAMBE). Such structures are potential candidates for high brightness LEDs emitting in longer wavelengths. The high resolution X-ray diffraction studies revealed the formation of two distinct compositions of In{sub x}Ga{sub 1−x}N alloys, which were further confirmed by photoluminescence studies. A possible mechanism for the formation of such structure was postulated which was supported with the results obtained by energy dispersive X-ray analysis. The structure hence grown when investigated for photo-detecting properties, showed sensitivity to both infrared and ultraviolet radiations due to the different composition of InGaN region.

Authors:
; ; ; ; ;  [1];  [1];  [2]; ;  [3]
  1. Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India)
  2. (India)
  3. Department of Physics, Indian Institute of Technology, Kharagpur (India)
Publication Date:
OSTI Identifier:
22454471
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 3; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALLOYS; BRIGHTNESS; GALLIUM NITRIDES; INDIUM; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SAPPHIRE; SENSITIVITY; ULTRAVIOLET RADIATION; X RADIATION; X-RAY DIFFRACTION

Citation Formats

Mukundan, Shruti, Mohan, Lokesh, Chandan, Greeshma, Krupanidhi, S. B., E-mail: sbk@mrc.iisc.ernet.in, Shinde, Satish, Nanda, K. K., Roul, Basanta, Central Research Laboratory, Bharat Electronics, Bangalore 560013, Maiti, R., and Ray, S. K. High indium non-polar InGaN clusters with infrared sensitivity grown by PAMBE. United States: N. p., 2015. Web. doi:10.1063/1.4914842.
Mukundan, Shruti, Mohan, Lokesh, Chandan, Greeshma, Krupanidhi, S. B., E-mail: sbk@mrc.iisc.ernet.in, Shinde, Satish, Nanda, K. K., Roul, Basanta, Central Research Laboratory, Bharat Electronics, Bangalore 560013, Maiti, R., & Ray, S. K. High indium non-polar InGaN clusters with infrared sensitivity grown by PAMBE. United States. doi:10.1063/1.4914842.
Mukundan, Shruti, Mohan, Lokesh, Chandan, Greeshma, Krupanidhi, S. B., E-mail: sbk@mrc.iisc.ernet.in, Shinde, Satish, Nanda, K. K., Roul, Basanta, Central Research Laboratory, Bharat Electronics, Bangalore 560013, Maiti, R., and Ray, S. K. Sun . "High indium non-polar InGaN clusters with infrared sensitivity grown by PAMBE". United States. doi:10.1063/1.4914842.
@article{osti_22454471,
title = {High indium non-polar InGaN clusters with infrared sensitivity grown by PAMBE},
author = {Mukundan, Shruti and Mohan, Lokesh and Chandan, Greeshma and Krupanidhi, S. B., E-mail: sbk@mrc.iisc.ernet.in and Shinde, Satish and Nanda, K. K. and Roul, Basanta and Central Research Laboratory, Bharat Electronics, Bangalore 560013 and Maiti, R. and Ray, S. K.},
abstractNote = {Studies on the optical properties of InGaN alloy of relatively higher indium content are of potential interest to understand the effect of indium content on the optical band gap of epitaxial InGaN. We report the growth of self assembled non-polar high indium clusters of In{sub 0.55}Ga{sub 0.45}N over non-polar (11-20) a-plane In{sub 0.17}Ga{sub 0.83}N epilayer grown on a-plane (11-20)GaN/(1-102) r-plane sapphire substrate using plasma assisted molecular beam epitaxy (PAMBE). Such structures are potential candidates for high brightness LEDs emitting in longer wavelengths. The high resolution X-ray diffraction studies revealed the formation of two distinct compositions of In{sub x}Ga{sub 1−x}N alloys, which were further confirmed by photoluminescence studies. A possible mechanism for the formation of such structure was postulated which was supported with the results obtained by energy dispersive X-ray analysis. The structure hence grown when investigated for photo-detecting properties, showed sensitivity to both infrared and ultraviolet radiations due to the different composition of InGaN region.},
doi = {10.1063/1.4914842},
journal = {AIP Advances},
number = 3,
volume = 5,
place = {United States},
year = {Sun Mar 15 00:00:00 EDT 2015},
month = {Sun Mar 15 00:00:00 EDT 2015}
}