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Title: Local doping of graphene devices by selective hydrogen adsorption

Abstract

N-type graphene fabricated by exposure to hydrogen gas has been previously studied. Based on this property of graphene, herein, we demonstrate local doping in single-layer graphene using selective adsorption of dissociative hydrogen at 350 K. A graphene field effect transistor was produced covered with PMMA on half of the graphene region. The charge neutrality point of the PMMA-window region shifted to a negative gate voltage (V{sub G}) region prominently compared with that of the PMMA-covered region. Consequently, a single graphene p-n junction was obtained by measuring the V{sub G}-dependent resistance of the whole graphene region. This method presents opportunities for developing and controlling the electronic structure of graphene and device applications.

Authors:
;  [1]; ;  [2]; ;  [3];  [4]
  1. Department of Physics and Astronomy and Department of Nano Science and Technology, Seoul National University, Seoul 151-747 (Korea, Republic of)
  2. Department of Materials Chemistry and Engineering, Konkuk University, Seoul 143-701 (Korea, Republic of)
  3. Department of Chemistry Education, Seoul National University, Seoul 151-742 (Korea, Republic of)
  4. Department of Physics, Incheon National University, Incheon 406-772 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22454423
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 1; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ADSORPTION; COMPARATIVE EVALUATIONS; ELECTRIC POTENTIAL; ELECTRONIC STRUCTURE; EQUIPMENT; FIELD EFFECT TRANSISTORS; GRAPHENE; HYDROGEN; PMMA; P-N JUNCTIONS

Citation Formats

Park, Min, Park, Yung Woo, E-mail: ywpark@phya.snu.ac.kr, E-mail: kbh37@incheon.ac.kr, Yun, Yong Ju, Jun, Yongseok, Lee, Minwoo, Jeong, Dae Hong, and Kim, Byung Hoon, E-mail: ywpark@phya.snu.ac.kr, E-mail: kbh37@incheon.ac.kr. Local doping of graphene devices by selective hydrogen adsorption. United States: N. p., 2015. Web. doi:10.1063/1.4906254.
Park, Min, Park, Yung Woo, E-mail: ywpark@phya.snu.ac.kr, E-mail: kbh37@incheon.ac.kr, Yun, Yong Ju, Jun, Yongseok, Lee, Minwoo, Jeong, Dae Hong, & Kim, Byung Hoon, E-mail: ywpark@phya.snu.ac.kr, E-mail: kbh37@incheon.ac.kr. Local doping of graphene devices by selective hydrogen adsorption. United States. doi:10.1063/1.4906254.
Park, Min, Park, Yung Woo, E-mail: ywpark@phya.snu.ac.kr, E-mail: kbh37@incheon.ac.kr, Yun, Yong Ju, Jun, Yongseok, Lee, Minwoo, Jeong, Dae Hong, and Kim, Byung Hoon, E-mail: ywpark@phya.snu.ac.kr, E-mail: kbh37@incheon.ac.kr. Thu . "Local doping of graphene devices by selective hydrogen adsorption". United States. doi:10.1063/1.4906254.
@article{osti_22454423,
title = {Local doping of graphene devices by selective hydrogen adsorption},
author = {Park, Min and Park, Yung Woo, E-mail: ywpark@phya.snu.ac.kr, E-mail: kbh37@incheon.ac.kr and Yun, Yong Ju and Jun, Yongseok and Lee, Minwoo and Jeong, Dae Hong and Kim, Byung Hoon, E-mail: ywpark@phya.snu.ac.kr, E-mail: kbh37@incheon.ac.kr},
abstractNote = {N-type graphene fabricated by exposure to hydrogen gas has been previously studied. Based on this property of graphene, herein, we demonstrate local doping in single-layer graphene using selective adsorption of dissociative hydrogen at 350 K. A graphene field effect transistor was produced covered with PMMA on half of the graphene region. The charge neutrality point of the PMMA-window region shifted to a negative gate voltage (V{sub G}) region prominently compared with that of the PMMA-covered region. Consequently, a single graphene p-n junction was obtained by measuring the V{sub G}-dependent resistance of the whole graphene region. This method presents opportunities for developing and controlling the electronic structure of graphene and device applications.},
doi = {10.1063/1.4906254},
journal = {AIP Advances},
number = 1,
volume = 5,
place = {United States},
year = {Thu Jan 15 00:00:00 EST 2015},
month = {Thu Jan 15 00:00:00 EST 2015}
}