Local doping of graphene devices by selective hydrogen adsorption
- Department of Materials Chemistry and Engineering, Konkuk University, Seoul 143-701 (Korea, Republic of)
- Department of Chemistry Education, Seoul National University, Seoul 151-742 (Korea, Republic of)
N-type graphene fabricated by exposure to hydrogen gas has been previously studied. Based on this property of graphene, herein, we demonstrate local doping in single-layer graphene using selective adsorption of dissociative hydrogen at 350 K. A graphene field effect transistor was produced covered with PMMA on half of the graphene region. The charge neutrality point of the PMMA-window region shifted to a negative gate voltage (V{sub G}) region prominently compared with that of the PMMA-covered region. Consequently, a single graphene p-n junction was obtained by measuring the V{sub G}-dependent resistance of the whole graphene region. This method presents opportunities for developing and controlling the electronic structure of graphene and device applications.
- OSTI ID:
- 22454423
- Journal Information:
- AIP Advances, Vol. 5, Issue 1; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
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