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Title: Growth and electrical transport properties of InGaN/GaN heterostructures grown by PAMBE

Abstract

Highlights: • InGaN thin films were grown on GaN template by PAMBE. • InGaN films were characterized by HRXRD, SEM and PL and Raman spectroscopy. • The indium incorporation in single phase InGaN films was found to be 23%. • The I–V characteristic of the InGaN/GaN heterojunction shows rectifying behavior. • Log–log plot of the I–V characteristics indicates the presence of SCLC mechanism. - Abstract: InGaN epitaxial films were grown on GaN template by plasma-assisted molecular beam epitaxy. The composition of indium incorporation in single phase InGaN film was found to be 23%. The band gap energy of single phase InGaN was found to be ∼2.48 eV. The current–voltage (I–V) characteristic of InGaN/GaN heterojunction was found to be rectifying behavior which shows the presence of Schottky barrier at the interface. Log–log plot of the I–V characteristics under forward bias indicates the current conduction mechanism is dominated by space charge limited current mechanism at higher applied voltage, which is usually caused due to the presence of trapping centers. The room temperature barrier height and the ideality factor of the Schottky junction were found to 0.76 eV and 4.9 respectively. The non-ideality of the Schottky junction may be due to the presencemore » of high pit density and dislocation density in InGaN film.« less

Authors:
 [1];  [2];  [3];  [2]; ; ;  [3];  [4];  [3]
  1. Office of Principal Scientific Advisor, Government of India, New Delhi 110011 (India)
  2. (India)
  3. Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India)
  4. Department of Physics, Gulbarga University, Gulbarga 585106 (India)
Publication Date:
OSTI Identifier:
22420789
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Research Bulletin; Journal Volume: 61; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; DISLOCATIONS; ELECTRIC CONDUCTIVITY; GALLIUM NITRIDES; HETEROJUNCTIONS; INDIUM COMPOUNDS; INTERFACES; MOLECULAR BEAM EPITAXY; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SPACE CHARGE; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TRAPPING; X-RAY DIFFRACTION

Citation Formats

Sinha, Neeraj, Department of Materials Science, Gulbarga University, Gulbarga 585106, Roul, Basanta, E-mail: basantaroul@gmail.com, Central Research Laboratory, Bharat Electronics, Bangalore 560013, Mukundan, Shruti, Chandan, Greeshma, Mohan, Lokesh, Jali, V.M., and Krupanidhi, S.B., E-mail: sbk@mrc.iisc.ernet.in. Growth and electrical transport properties of InGaN/GaN heterostructures grown by PAMBE. United States: N. p., 2015. Web. doi:10.1016/J.MATERRESBULL.2014.10.059.
Sinha, Neeraj, Department of Materials Science, Gulbarga University, Gulbarga 585106, Roul, Basanta, E-mail: basantaroul@gmail.com, Central Research Laboratory, Bharat Electronics, Bangalore 560013, Mukundan, Shruti, Chandan, Greeshma, Mohan, Lokesh, Jali, V.M., & Krupanidhi, S.B., E-mail: sbk@mrc.iisc.ernet.in. Growth and electrical transport properties of InGaN/GaN heterostructures grown by PAMBE. United States. doi:10.1016/J.MATERRESBULL.2014.10.059.
Sinha, Neeraj, Department of Materials Science, Gulbarga University, Gulbarga 585106, Roul, Basanta, E-mail: basantaroul@gmail.com, Central Research Laboratory, Bharat Electronics, Bangalore 560013, Mukundan, Shruti, Chandan, Greeshma, Mohan, Lokesh, Jali, V.M., and Krupanidhi, S.B., E-mail: sbk@mrc.iisc.ernet.in. Thu . "Growth and electrical transport properties of InGaN/GaN heterostructures grown by PAMBE". United States. doi:10.1016/J.MATERRESBULL.2014.10.059.
@article{osti_22420789,
title = {Growth and electrical transport properties of InGaN/GaN heterostructures grown by PAMBE},
author = {Sinha, Neeraj and Department of Materials Science, Gulbarga University, Gulbarga 585106 and Roul, Basanta, E-mail: basantaroul@gmail.com and Central Research Laboratory, Bharat Electronics, Bangalore 560013 and Mukundan, Shruti and Chandan, Greeshma and Mohan, Lokesh and Jali, V.M. and Krupanidhi, S.B., E-mail: sbk@mrc.iisc.ernet.in},
abstractNote = {Highlights: • InGaN thin films were grown on GaN template by PAMBE. • InGaN films were characterized by HRXRD, SEM and PL and Raman spectroscopy. • The indium incorporation in single phase InGaN films was found to be 23%. • The I–V characteristic of the InGaN/GaN heterojunction shows rectifying behavior. • Log–log plot of the I–V characteristics indicates the presence of SCLC mechanism. - Abstract: InGaN epitaxial films were grown on GaN template by plasma-assisted molecular beam epitaxy. The composition of indium incorporation in single phase InGaN film was found to be 23%. The band gap energy of single phase InGaN was found to be ∼2.48 eV. The current–voltage (I–V) characteristic of InGaN/GaN heterojunction was found to be rectifying behavior which shows the presence of Schottky barrier at the interface. Log–log plot of the I–V characteristics under forward bias indicates the current conduction mechanism is dominated by space charge limited current mechanism at higher applied voltage, which is usually caused due to the presence of trapping centers. The room temperature barrier height and the ideality factor of the Schottky junction were found to 0.76 eV and 4.9 respectively. The non-ideality of the Schottky junction may be due to the presence of high pit density and dislocation density in InGaN film.},
doi = {10.1016/J.MATERRESBULL.2014.10.059},
journal = {Materials Research Bulletin},
number = ,
volume = 61,
place = {United States},
year = {Thu Jan 15 00:00:00 EST 2015},
month = {Thu Jan 15 00:00:00 EST 2015}
}